FQPF6N60C

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Pbfree Code :

yes

Configuration :

SINGLE WITH BUILT-IN DIODE

Rds On (Max) @ Id, Vgs :

2 Ω @ 2.75A, 10V

Pulsed Drain Current-Max (IDM) :

22A

Drain Current-Max (Abs) (ID) :

5.5A

Operating Temperature :

-55°C~150°C TJ

Surface Mount :

No

Additional Feature :

FAST SWITCHING

Packaging :

Tube

Qualification Status :

COMMERCIAL

Transistor Element Material :

SILICON

DS Breakdown Voltage-Min :

600V

Gate Charge (Qg) (Max) @ Vgs :

20nC @ 10V

Number of Terminations :

3

JEDEC-95 Code :

TO-220AB

Peak Reflow Temperature (Cel) :

Not Applicable

Pin Count :

3

Transistor Application :

SWITCHING

Drain to Source Voltage (Vdss) :

600V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Avalanche Energy Rating (Eas) :

300 mJ

Input Capacitance (Ciss) (Max) @ Vds :

810pF @ 25V

Time@Peak Reflow Temperature-Max (s) :

Not Applicable

Terminal Finish :

MATTE TIN

Drive Voltage (Max Rds On,Min Rds On) :

10V

Vgs(th) (Max) @ Id :

4V @ 250µA

Mounting Type :

Through Hole

Drain-source On Resistance-Max :

2Ohm

FET Type :

N-Channel

Terminal Position :

Single

Number of Elements :

1

Vgs (Max) :

±30V

Current - Continuous Drain (Id) @ 25°C :

5.5A Tc

RoHS Status :

ROHS3 Compliant

Case Connection :

Isolated

Series :

QFET®

JESD-609 Code :

e3

Power Dissipation-Max :

40W Tc

JESD-30 Code :

R-PSFM-T3

Operating Mode :

ENHANCEMENT MODE

Package / Case :

TO-220-3 Full Pack