FQPF5P20

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Turn On Delay Time :

9 ns

Number of Terminations :

3

Radiation Hardening :

No

Input Capacitance (Ciss) (Max) @ Vds :

430pF @ 25V

Drain to Source Breakdown Voltage :

-200V

Pbfree Code :

yes

Rise Time :

70ns

Series :

QFET®

Current - Continuous Drain (Id) @ 25°C :

3.4A Tc

Vgs(th) (Max) @ Id :

5V @ 250μA

Power Dissipation-Max :

38W Tc

Transistor Application :

SWITCHING

Rds On (Max) @ Id, Vgs :

1.4 Ω @ 1.7A, 10V

Height :

16.07mm

Gate Charge (Qg) (Max) @ Vgs :

13nC @ 10V

Factory Lead Time :

4 Weeks

Operating Mode :

ENHANCEMENT MODE

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Mounting Type :

Through Hole

Vgs (Max) :

±30V

Terminal Finish :

Tin (Sn)

JESD-609 Code :

e3

Length :

10.36mm

Continuous Drain Current (ID) :

3.4A

Drive Voltage (Max Rds On,Min Rds On) :

10V

Turn-Off Delay Time :

12 ns

Operating Temperature :

-55°C~150°C TJ

FET Type :

P-Channel

Case Connection :

Isolated

RoHS Status :

ROHS3 Compliant

Packaging :

Tube

Number of Elements :

1

Package / Case :

TO-220-3 Full Pack

Lead Free :

Lead Free

Number of Pins :

3

Lifecycle Status :

ACTIVE (Last Updated: 5 days ago)

Voltage - Rated DC :

-200V

Published :

2017

Transistor Element Material :

SILICON

Gate to Source Voltage (Vgs) :

30V

Mount :

Through Hole

Element Configuration :

Single

Drain to Source Voltage (Vdss) :

200V

Weight :

2.27g

Fall Time (Typ) :

25 ns

Width :

4.9mm

Power Dissipation :

38W

ECCN Code :

EAR99

Current Rating :

-3.4A