FQPF5N90

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Packaging :

Tube

Current - Continuous Drain (Id) @ 25°C :

3A Tc

ECCN Code :

EAR99

Published :

2000

Height :

9.19mm

Avalanche Energy Rating (Eas) :

660 mJ

Turn-Off Delay Time :

65 ns

Package / Case :

TO-220-3 Full Pack

Element Configuration :

Single

Lead Free :

Lead Free

Number of Pins :

3

Voltage - Rated DC :

900V

Fall Time (Typ) :

50 ns

Input Capacitance (Ciss) (Max) @ Vds :

1550pF @ 25V

Number of Elements :

1

Case Connection :

Isolated

Drain to Source Breakdown Voltage :

900V

Turn On Delay Time :

28 ns

Current Rating :

3A

Mount :

Through Hole

Resistance :

2.3Ohm

JESD-609 Code :

e3

Number of Terminations :

3

Series :

QFET®

Pbfree Code :

yes

Vgs(th) (Max) @ Id :

5V @ 250μA

Operating Mode :

ENHANCEMENT MODE

Transistor Element Material :

SILICON

Rds On (Max) @ Id, Vgs :

2.3 Ω @ 1.5A, 10V

FET Type :

N-Channel

Drain Current-Max (Abs) (ID) :

3A

Gate to Source Voltage (Vgs) :

30V

Lifecycle Status :

ACTIVE (Last Updated: 4 days ago)

Weight :

2.27g

Gate Charge (Qg) (Max) @ Vgs :

40nC @ 10V

Factory Lead Time :

8 Weeks

Terminal Finish :

Tin (Sn)

Power Dissipation :

51W

Rise Time :

65ns

Power Dissipation-Max :

51W Tc

Mounting Type :

Through Hole

Length :

10.16mm

Operating Temperature :

-55°C~150°C TJ

Radiation Hardening :

No

Width :

4.7mm

Vgs (Max) :

±30V

RoHS Status :

ROHS3 Compliant

Transistor Application :

SWITCHING

Drive Voltage (Max Rds On,Min Rds On) :

10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Continuous Drain Current (ID) :

3A