FQPF5N60C
- Mfr.Part #
- FQPF5N60C
- Manufacturer
- onsemi
- Package / Case
- TO-220-3 Full Pack
- Datasheet
- Download
- Description
- MOSFET N-CH 600V 4.5A TO220F
- Stock
- 8,000
- In Stock :
- 8,000
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Series :
- QFET®
- JEDEC-95 Code :
- TO-220AB
- Drain to Source Breakdown Voltage :
- 600V
- Lead Free :
- Lead Free
- ECCN Code :
- EAR99
- Vgs (Max) :
- ±30V
- Continuous Drain Current (ID) :
- 4.5A
- Factory Lead Time :
- 4 Weeks
- Power Dissipation :
- 33W
- Power Dissipation-Max :
- 33W Tc
- Height :
- 9.19mm
- Operating Mode :
- ENHANCEMENT MODE
- Number of Terminations :
- 3
- Terminal Finish :
- Tin (Sn)
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Mount :
- Through Hole
- Width :
- 4.7mm
- Mounting Type :
- Through Hole
- Radiation Hardening :
- No
- Current Rating :
- 4.5A
- FET Type :
- N-Channel
- Voltage - Rated DC :
- 600V
- Rds On (Max) @ Id, Vgs :
- 2.5 Ω @ 2.25A, 10V
- Weight :
- 2.27g
- Number of Elements :
- 1
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Pbfree Code :
- yes
- Element Configuration :
- Single
- Turn-Off Delay Time :
- 38 ns
- RoHS Status :
- ROHS3 Compliant
- Gate to Source Voltage (Vgs) :
- 30V
- Gate Charge (Qg) (Max) @ Vgs :
- 19nC @ 10V
- Number of Pins :
- 3
- JESD-609 Code :
- e3
- Packaging :
- Tube
- REACH SVHC :
- No SVHC
- Operating Temperature :
- -55°C~150°C TJ
- Published :
- 2013
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Length :
- 10.16mm
- Lifecycle Status :
- ACTIVE, NOT REC (Last Updated: 4 days ago)
- Turn On Delay Time :
- 10 ns
- Rise Time :
- 42ns
- Fall Time (Typ) :
- 46 ns
- Current - Continuous Drain (Id) @ 25°C :
- 4.5A Tc
- Package / Case :
- TO-220-3 Full Pack
- Input Capacitance (Ciss) (Max) @ Vds :
- 670pF @ 25V
- Case Connection :
- Isolated
- Transistor Element Material :
- SILICON
- Transistor Application :
- SWITCHING
- Threshold Voltage :
- 4V
- Datasheets
- FQPF5N60C

N-Channel Tube 2.5 Ω @ 2.25A, 10V ±30V 670pF @ 25V 19nC @ 10V TO-220-3 Full Pack
FQPF5N60C Description
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor's proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.
FQPF5N60C Features
?4.5 A, 600 V, RDS(on), 2.5 Q, @VGS= 10 V, lD = 2.25 A
? Minimal Gate Fee (Typ. 15 nC)
?Small Crss (Typ. 6.5 pF)
?Avalanche tested in full
FQPF5N60C Applications
Switching applications
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