FQPF5N50

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Mounting Type :

Through Hole

JESD-609 Code :

e3

DS Breakdown Voltage-Min :

500V

Terminal Position :

Single

FET Type :

N-Channel

Transistor Element Material :

SILICON

Gate Charge (Qg) (Max) @ Vgs :

17nC @ 10V

Vgs (Max) :

±30V

Drain Current-Max (Abs) (ID) :

3A

Power Dissipation-Max :

39W Tc

Time@Peak Reflow Temperature-Max (s) :

Not Applicable

Pin Count :

3

Avalanche Energy Rating (Eas) :

300 mJ

Rds On (Max) @ Id, Vgs :

1.8 Ω @ 1.5A, 10V

Peak Reflow Temperature (Cel) :

Not Applicable

Vgs(th) (Max) @ Id :

5V @ 250μA

RoHS Status :

ROHS3 Compliant

Drain to Source Voltage (Vdss) :

500V

Pbfree Code :

yes

Current - Continuous Drain (Id) @ 25°C :

3A Tc

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Surface Mount :

No

Series :

QFET®

Configuration :

SINGLE WITH BUILT-IN DIODE

Package / Case :

TO-220-3 Full Pack

Transistor Application :

SWITCHING

Reach Compliance Code :

Unknown

Input Capacitance (Ciss) (Max) @ Vds :

610pF @ 25V

Number of Terminations :

3

Operating Temperature :

-55°C~150°C TJ

Number of Elements :

1

Qualification Status :

COMMERCIAL

JESD-30 Code :

R-PSFM-T3

Pulsed Drain Current-Max (IDM) :

12A

Terminal Finish :

MATTE TIN

Case Connection :

Isolated

Operating Mode :

ENHANCEMENT MODE

Drive Voltage (Max Rds On,Min Rds On) :

10V

Packaging :

Tube