FQPF5N40

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Rise Time :

60ns

FET Type :

N-Channel

Operating Temperature :

-55°C~150°C TJ

Published :

2013

Terminal Finish :

Tin (Sn)

Lifecycle Status :

ACTIVE (Last Updated: 3 days ago)

Power Dissipation :

35W

Drive Voltage (Max Rds On,Min Rds On) :

10V

JESD-609 Code :

e3

Number of Pins :

3

Power Dissipation-Max :

35W Tc

Current - Continuous Drain (Id) @ 25°C :

3A Tc

Weight :

2.27g

Transistor Application :

SWITCHING

Transistor Element Material :

SILICON

Mount :

Through Hole

Radiation Hardening :

No

Number of Elements :

1

Gate Charge (Qg) (Max) @ Vgs :

13nC @ 10V

Number of Terminations :

3

Continuous Drain Current (ID) :

3A

Current Rating :

3A

Vgs(th) (Max) @ Id :

4V @ 250µA

Gate to Source Voltage (Vgs) :

30V

Rds On (Max) @ Id, Vgs :

1.6 Ω @ 1.5A, 10V

Series :

QFET®

Element Configuration :

Single

Package / Case :

TO-220-3 Full Pack

Factory Lead Time :

4 Weeks

Drain to Source Breakdown Voltage :

400V

Turn On Delay Time :

12 ns

Recovery Time :

190 ns

Operating Mode :

ENHANCEMENT MODE

Drain Current-Max (Abs) (ID) :

3A

Lead Free :

Lead Free

RoHS Status :

ROHS3 Compliant

Input Capacitance (Ciss) (Max) @ Vds :

460pF @ 25V

Packaging :

Tube

Case Connection :

Isolated

Fall Time (Typ) :

30 ns

Pbfree Code :

yes

Voltage - Rated DC :

400V

Turn-Off Delay Time :

20 ns

Vgs (Max) :

±30V

ECCN Code :

EAR99

Avalanche Energy Rating (Eas) :

290 mJ

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Mounting Type :

Through Hole