FQPF5N20L

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Rds On (Max) @ Id, Vgs :

1.2 Ω @ 1.75A, 10V

Number of Terminations :

3

Drain Current-Max (Abs) (ID) :

3.5A

Power Dissipation-Max :

32W Tc

Pin Count :

3

RoHS Status :

ROHS3 Compliant

Avalanche Energy Rating (Eas) :

60 mJ

Operating Temperature :

-55°C~150°C TJ

Vgs (Max) :

±20V

Package / Case :

TO-220-3 Full Pack

Time@Peak Reflow Temperature-Max (s) :

Not Applicable

Terminal Finish :

MATTE TIN

Packaging :

Tube

Configuration :

SINGLE WITH BUILT-IN DIODE

Gate Charge (Qg) (Max) @ Vgs :

6.2nC @ 5V

Current - Continuous Drain (Id) @ 25°C :

3.5A Tc

FET Type :

N-Channel

Drive Voltage (Max Rds On,Min Rds On) :

5V 10V

Transistor Element Material :

SILICON

DS Breakdown Voltage-Min :

200V

JESD-609 Code :

e3

Operating Mode :

ENHANCEMENT MODE

Vgs(th) (Max) @ Id :

2V @ 250μA

Transistor Application :

SWITCHING

Number of Elements :

1

JESD-30 Code :

R-PSFM-T3

Reach Compliance Code :

Unknown

Pulsed Drain Current-Max (IDM) :

14A

Case Connection :

Isolated

Pbfree Code :

yes

Surface Mount :

No

Input Capacitance (Ciss) (Max) @ Vds :

325pF @ 25V

Series :

QFET®

Drain to Source Voltage (Vdss) :

200V

Peak Reflow Temperature (Cel) :

Not Applicable

Terminal Position :

Single

Qualification Status :

COMMERCIAL

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Mounting Type :

Through Hole