FQPF5N20L
- Mfr.Part #
- FQPF5N20L
- Manufacturer
- Fairchild Semiconductor
- Package / Case
- TO-220-3 Full Pack
- Datasheet
- Download
- Description
- MOSFET N-CH 200V 3.5A TO220F
- Stock
- 1
- In Stock :
- 1
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- Manufacturer :
- Fairchild Semiconductor
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Terminal Position :
- Single
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Vgs(th) (Max) @ Id :
- 2V @ 250μA
- Vgs (Max) :
- ±20V
- FET Type :
- N-Channel
- Avalanche Energy Rating (Eas) :
- 60 mJ
- Qualification Status :
- COMMERCIAL
- Gate Charge (Qg) (Max) @ Vgs :
- 6.2nC @ 5V
- Pbfree Code :
- yes
- RoHS Status :
- ROHS3 Compliant
- Number of Terminations :
- 3
- Transistor Application :
- SWITCHING
- JESD-609 Code :
- e3
- Drain to Source Voltage (Vdss) :
- 200V
- DS Breakdown Voltage-Min :
- 200V
- Case Connection :
- Isolated
- Drain Current-Max (Abs) (ID) :
- 3.5A
- Current - Continuous Drain (Id) @ 25°C :
- 3.5A Tc
- Terminal Finish :
- MATTE TIN
- Input Capacitance (Ciss) (Max) @ Vds :
- 325pF @ 25V
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Time@Peak Reflow Temperature-Max (s) :
- Not Applicable
- Surface Mount :
- No
- Pin Count :
- 3
- Reach Compliance Code :
- Unknown
- Power Dissipation-Max :
- 32W Tc
- JESD-30 Code :
- R-PSFM-T3
- Pulsed Drain Current-Max (IDM) :
- 14A
- Number of Elements :
- 1
- Series :
- QFET®
- Peak Reflow Temperature (Cel) :
- Not Applicable
- Drive Voltage (Max Rds On,Min Rds On) :
- 5V 10V
- Package / Case :
- TO-220-3 Full Pack
- Operating Mode :
- ENHANCEMENT MODE
- Packaging :
- Tube
- Transistor Element Material :
- SILICON
- Rds On (Max) @ Id, Vgs :
- 1.2 Ω @ 1.75A, 10V
- Operating Temperature :
- -55°C~150°C TJ
- Mounting Type :
- Through Hole
- Datasheets
- FQPF5N20L

N-Channel Tube 1.2 Ω @ 1.75A, 10V ±20V 325pF @ 25V 6.2nC @ 5V 200V TO-220-3 Full Pack
FQPF5N20L Overview
As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 60 mJ.CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 325pF @ 25V.There is no drain current on this device since the maximum continuous current it can conduct is 3.5A.There is a peak drain current of 14A, its maximum pulsed drain current.In order for DS breakdown voltage to remain above 200V, it should remain above the 200V level.The transistor must receive a 200V drain to source voltage (Vdss) in order to function.In addition to reducing power consumption, this device uses drive voltage (5V 10V).
FQPF5N20L Features
the avalanche energy rating (Eas) is 60 mJ
based on its rated peak drain current 14A.
a 200V drain to source voltage (Vdss)
FQPF5N20L Applications
There are a lot of Rochester Electronics, LLC
FQPF5N20L applications of single MOSFETs transistors.
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
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