FQPF4N80

Manufacturer :

Fairchild Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Pulsed Drain Current-Max (IDM) :

8.8A

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Configuration :

SINGLE WITH BUILT-IN DIODE

Mounting Type :

Through Hole

Number of Elements :

1

RoHS Status :

ROHS3 Compliant

Drain to Source Voltage (Vdss) :

800V

Surface Mount :

No

Transistor Element Material :

SILICON

Gate Charge (Qg) (Max) @ Vgs :

25nC @ 10V

Power Dissipation-Max :

43W Tc

Drive Voltage (Max Rds On,Min Rds On) :

10V

Vgs (Max) :

±30V

Operating Temperature :

-55°C~150°C TJ

Transistor Application :

SWITCHING

Avalanche Energy Rating (Eas) :

460 mJ

Number of Terminations :

3

Operating Mode :

ENHANCEMENT MODE

JESD-30 Code :

R-PSFM-T3

Vgs(th) (Max) @ Id :

5V @ 250μA

Pin Count :

3

Pbfree Code :

yes

Time@Peak Reflow Temperature-Max (s) :

Not Applicable

JESD-609 Code :

e3

Terminal Finish :

MATTE TIN

Case Connection :

Isolated

Series :

QFET®

Current - Continuous Drain (Id) @ 25°C :

2.2A Tc

Package / Case :

TO-220-3 Full Pack

Peak Reflow Temperature (Cel) :

Not Applicable

Drain Current-Max (Abs) (ID) :

2.2A

DS Breakdown Voltage-Min :

800V

Rds On (Max) @ Id, Vgs :

3.6 Ω @ 1.1A, 10V

Input Capacitance (Ciss) (Max) @ Vds :

880pF @ 25V

FET Type :

N-Channel

Packaging :

Tube

Qualification Status :

COMMERCIAL

Terminal Position :

Single