FQPF4N20

Manufacturer :

Fairchild Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Pulsed Drain Current-Max (IDM) :

11.2A

DS Breakdown Voltage-Min :

200V

FET Type :

N-Channel

Time@Peak Reflow Temperature-Max (s) :

Not Applicable

Number of Terminations :

3

Series :

QFET®

Avalanche Energy Rating (Eas) :

52 mJ

Pin Count :

3

Rds On (Max) @ Id, Vgs :

1.4 Ω @ 1.4A, 10V

Packaging :

Tube

Terminal Finish :

MATTE TIN

JESD-609 Code :

e3

Vgs (Max) :

±30V

JESD-30 Code :

R-PSFM-T3

Number of Elements :

1

Surface Mount :

No

Peak Reflow Temperature (Cel) :

Not Applicable

Vgs(th) (Max) @ Id :

5V @ 250μA

Operating Mode :

ENHANCEMENT MODE

Operating Temperature :

-55°C~150°C TJ

Current - Continuous Drain (Id) @ 25°C :

2.8A Tc

Drive Voltage (Max Rds On,Min Rds On) :

10V

Qualification Status :

COMMERCIAL

Pbfree Code :

yes

RoHS Status :

ROHS3 Compliant

Drain to Source Voltage (Vdss) :

200V

Case Connection :

Isolated

Package / Case :

TO-220-3 Full Pack

Mounting Type :

Through Hole

JEDEC-95 Code :

TO-220AB

Drain Current-Max (Abs) (ID) :

2.8A

Input Capacitance (Ciss) (Max) @ Vds :

220pF @ 25V

Power Dissipation-Max :

27W Tc

Transistor Element Material :

SILICON

Configuration :

SINGLE WITH BUILT-IN DIODE

Reach Compliance Code :

Unknown

Transistor Application :

SWITCHING

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Gate Charge (Qg) (Max) @ Vgs :

6.5nC @ 10V

Terminal Position :

Single