FQPF3N90

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Avalanche Energy Rating (Eas) :

450 mJ

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Power Dissipation-Max :

43W Tc

Gate Charge (Qg) (Max) @ Vgs :

26nC @ 10V

Pulsed Drain Current-Max (IDM) :

8.4A

JESD-609 Code :

e3

Number of Elements :

1

Case Connection :

Isolated

Surface Mount :

No

Terminal Finish :

MATTE TIN

FET Type :

N-Channel

Input Capacitance (Ciss) (Max) @ Vds :

910pF @ 25V

DS Breakdown Voltage-Min :

900V

Vgs (Max) :

±30V

Configuration :

SINGLE WITH BUILT-IN DIODE

JESD-30 Code :

R-PSFM-T3

Series :

QFET®

Operating Temperature :

-55°C~150°C TJ

Reach Compliance Code :

Unknown

Peak Reflow Temperature (Cel) :

Not Applicable

Rds On (Max) @ Id, Vgs :

4.25 Ω @ 1.05A, 10V

Transistor Application :

SWITCHING

Terminal Position :

Single

Drive Voltage (Max Rds On,Min Rds On) :

10V

RoHS Status :

ROHS3 Compliant

Pbfree Code :

yes

Qualification Status :

COMMERCIAL

Vgs(th) (Max) @ Id :

5V @ 250μA

Transistor Element Material :

SILICON

Time@Peak Reflow Temperature-Max (s) :

Not Applicable

Packaging :

Tube

Pin Count :

3

Drain Current-Max (Abs) (ID) :

2.1A

Current - Continuous Drain (Id) @ 25°C :

2.1A Tc

Package / Case :

TO-220-3 Full Pack

Drain to Source Voltage (Vdss) :

900V

Operating Mode :

ENHANCEMENT MODE

Mounting Type :

Through Hole

Number of Terminations :

3