FQPF3N80

Manufacturer :

Fairchild Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Drain Current-Max (Abs) (ID) :

3A

Fall Time (Typ) :

32 ns

Factory Lead Time :

8 Weeks

Mounting Type :

Through Hole

ECCN Code :

EAR99

Input Capacitance (Ciss) (Max) @ Vds :

705pF @ 25V

Rise Time :

43.5ns

REACH SVHC :

No SVHC

JEDEC-95 Code :

TO-220AB

Number of Elements :

1

Packaging :

Tube

Height :

9.19mm

Pbfree Code :

yes

Operating Mode :

ENHANCEMENT MODE

Mount :

Through Hole

Operating Temperature :

-55°C~150°C TJ

Lifecycle Status :

ACTIVE (Last Updated: 2 days ago)

Transistor Element Material :

SILICON

Number of Terminations :

3

Radiation Hardening :

No

Published :

2003

Gate to Source Voltage (Vgs) :

30V

Continuous Drain Current (ID) :

3A

Drain to Source Breakdown Voltage :

800V

Current - Continuous Drain (Id) @ 25°C :

3A Tc

Turn On Delay Time :

15 ns

Terminal Finish :

Tin (Sn)

JESD-609 Code :

e3

Width :

4.7mm

Power Dissipation-Max :

39W Tc

Weight :

2.27g

Threshold Voltage :

5V

FET Type :

N-Channel

Length :

10.16mm

Vgs(th) (Max) @ Id :

5V @ 250μA

Current Rating :

3A

Power Dissipation :

39W

RoHS Status :

ROHS3 Compliant

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Voltage - Rated DC :

800V

Element Configuration :

Single

Series :

QFET®

Vgs (Max) :

±30V

Turn-Off Delay Time :

22.5 ns

Lead Free :

Lead Free

Package / Case :

TO-220-3 Full Pack

Gate Charge (Qg) (Max) @ Vgs :

16.5nC @ 10V

Case Connection :

Isolated

Number of Pins :

3

Transistor Application :

SWITCHING

Drive Voltage (Max Rds On,Min Rds On) :

10V

Rds On (Max) @ Id, Vgs :

4.8 Ω @ 1.5A, 10V