FQPF3N80
- Mfr.Part #
- FQPF3N80
- Manufacturer
- onsemi
- Package / Case
- TO-220-3 Full Pack
- Datasheet
- Download
- Description
- MOSFET N-CH 800V 1.8A TO220F
- Stock
- 42,826
- In Stock :
- 42,826
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Height :
- 9.19mm
- RoHS Status :
- ROHS3 Compliant
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Turn-Off Delay Time :
- 22.5 ns
- Number of Elements :
- 1
- Package / Case :
- TO-220-3 Full Pack
- Mounting Type :
- Through Hole
- Weight :
- 2.27g
- Operating Temperature :
- -55°C~150°C TJ
- Case Connection :
- Isolated
- Lifecycle Status :
- ACTIVE (Last Updated: 2 days ago)
- Length :
- 10.16mm
- Vgs(th) (Max) @ Id :
- 5V @ 250μA
- Width :
- 4.7mm
- Lead Free :
- Lead Free
- FET Type :
- N-Channel
- Published :
- 2003
- Number of Pins :
- 3
- ECCN Code :
- EAR99
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- REACH SVHC :
- No SVHC
- Vgs (Max) :
- ±30V
- Threshold Voltage :
- 5V
- Radiation Hardening :
- No
- JESD-609 Code :
- e3
- Fall Time (Typ) :
- 32 ns
- Turn On Delay Time :
- 15 ns
- Packaging :
- Tube
- Transistor Application :
- SWITCHING
- Series :
- QFET®
- Current - Continuous Drain (Id) @ 25°C :
- 3A Tc
- Power Dissipation-Max :
- 39W Tc
- Pbfree Code :
- yes
- Transistor Element Material :
- SILICON
- Continuous Drain Current (ID) :
- 3A
- Number of Terminations :
- 3
- Operating Mode :
- ENHANCEMENT MODE
- Power Dissipation :
- 39W
- Mount :
- Through Hole
- JEDEC-95 Code :
- TO-220AB
- Drain Current-Max (Abs) (ID) :
- 3A
- Gate Charge (Qg) (Max) @ Vgs :
- 16.5nC @ 10V
- Current Rating :
- 3A
- Element Configuration :
- Single
- Drain to Source Breakdown Voltage :
- 800V
- Terminal Finish :
- Tin (Sn)
- Gate to Source Voltage (Vgs) :
- 30V
- Rds On (Max) @ Id, Vgs :
- 4.8 Ω @ 1.5A, 10V
- Voltage - Rated DC :
- 800V
- Input Capacitance (Ciss) (Max) @ Vds :
- 705pF @ 25V
- Factory Lead Time :
- 8 Weeks
- Rise Time :
- 43.5ns
- Datasheets
- FQPF3N80

N-Channel Tube 4.8 Ω @ 1.5A, 10V ±30V 705pF @ 25V 16.5nC @ 10V TO-220-3 Full Pack
FQPF3N80C Description
The FQPF3N80C is an N-Channel enhancement mode power MOSFET produced using ON Semiconductor Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been specially tailored to reduce on-state resistance and to provide superior switching performance and high avalanche energy strength.
FQPF3N80C Features
-
3A, 800V, RDS(on) = 4.8Ω(Max.) @VGS = 10 V, ID = 1.5A
-
Low gate charge ( Typ. 13nC)
-
Low Crss ( Typ. 5.5pF)
-
100% avalanche tested
FQPF3N80C Applicaitons
-
Desktop PC
-
AC-DC Merchant Power Supply - Desktop PC
-
LCD TV
-
LED TV
-
Lighting
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