FQPF3N40

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Mfr.Part #
FQPF3N40
Manufacturer
onsemi
Package / Case
TO-220-3 Full Pack
Datasheet
Download
Description
MOSFET N-CH 400V 1.6A TO220F
Stock
19,870
In Stock :
19,870

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Manufacturer :
onsemi
Product Category :
Transistors - FETs, MOSFETs - Single
Input Capacitance (Ciss) (Max) @ Vds :
230pF @ 25V
Packaging :
Tube
Reach Compliance Code :
Unknown
Series :
QFET®
Configuration :
SINGLE WITH BUILT-IN DIODE
Case Connection :
Isolated
Qualification Status :
COMMERCIAL
JESD-30 Code :
R-PSFM-T3
Drain to Source Voltage (Vdss) :
400V
Number of Terminations :
3
Vgs (Max) :
±30V
Vgs(th) (Max) @ Id :
5V @ 250μA
Drain Current-Max (Abs) (ID) :
1.6A
Pin Count :
3
Time@Peak Reflow Temperature-Max (s) :
Not Applicable
Avalanche Energy Rating (Eas) :
120 mJ
Gate Charge (Qg) (Max) @ Vgs :
7.5nC @ 10V
Package / Case :
TO-220-3 Full Pack
Pulsed Drain Current-Max (IDM) :
6.4A
Power Dissipation-Max :
20W Tc
Mounting Type :
Through Hole
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Operating Mode :
ENHANCEMENT MODE
Drive Voltage (Max Rds On,Min Rds On) :
10V
JESD-609 Code :
e3
RoHS Status :
ROHS3 Compliant
Surface Mount :
No
Current - Continuous Drain (Id) @ 25°C :
1.6A Tc
Transistor Application :
SWITCHING
Terminal Position :
Single
Operating Temperature :
-55°C~150°C TJ
Number of Elements :
1
Rds On (Max) @ Id, Vgs :
3.4 Ω @ 800mA, 10V
Terminal Finish :
MATTE TIN
Transistor Element Material :
SILICON
Pbfree Code :
yes
Peak Reflow Temperature (Cel) :
Not Applicable
FET Type :
N-Channel
DS Breakdown Voltage-Min :
400V
Datasheets
FQPF3N40
Introducing Transistors - FETs, MOSFETs - Single onsemi FQPF3N40 from Chip IC,where excellence meets affordability. This product stands out with its Number of Terminations:3, Package / Case:TO-220-3 Full Pack, Mounting Type:Through Hole, Operating Temperature:-55°C~150°C TJ, FQPF3N40 pinout, FQPF3N40 datasheet PDF, FQPF3N40 amp .Beyond Transistors - FETs, MOSFETs - Single onsemi FQPF3N40 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi FQPF3N40


N-Channel Tube 3.4 Ω @ 800mA, 10V ±30V 230pF @ 25V 7.5nC @ 10V 400V TO-220-3 Full Pack

FQPF3N40 Overview


When a voltage exceeds breakdown voltage of a MOSFET, breakdown phenomena occurs and current flows. It's called “Avalanche break down”, and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 120 mJ.The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 230pF @ 25V.The drain current is the maximum continuous current the device can conduct, and the drain current of this device is 1.6A.IDM is the maximum rated peak drain current for a power MOSFET, and its maximal pulsed drain current is 6.4A.Single MOSFETs transistor is recommended that the DS breakdown voltage be kept above 400V in order to maintain normal operation.Operating this transistor requires a 400V drain to source voltage (Vdss).By using drive voltage (10V), this device helps reduce its overall power consumption.

FQPF3N40 Features


the avalanche energy rating (Eas) is 120 mJ
based on its rated peak drain current 6.4A.
a 400V drain to source voltage (Vdss)


FQPF3N40 Applications


There are a lot of Rochester Electronics, LLC
FQPF3N40 applications of single MOSFETs transistors.


  • LCD/LED TV
  • Consumer Appliances
  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
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