FQPF33N10

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Factory Lead Time :

4 Weeks

Voltage - Rated DC :

100V

Drain to Source Breakdown Voltage :

100V

Gate to Source Voltage (Vgs) :

25V

Transistor Element Material :

SILICON

Weight :

2.27g

Pbfree Code :

yes

Input Capacitance (Ciss) (Max) @ Vds :

1500pF @ 25V

Lifecycle Status :

ACTIVE (Last Updated: 1 week ago)

Continuous Drain Current (ID) :

18A

RoHS Status :

ROHS3 Compliant

Mounting Type :

Through Hole

Power Dissipation :

41W

Turn On Delay Time :

15 ns

Fall Time (Typ) :

110 ns

Published :

2013

Operating Mode :

ENHANCEMENT MODE

Terminal Finish :

Tin (Sn)

Element Configuration :

Single

Operating Temperature :

-55°C~175°C TJ

Packaging :

Tube

JESD-609 Code :

e3

Drain-source On Resistance-Max :

0.052Ohm

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Radiation Hardening :

No

Package / Case :

TO-220-3 Full Pack

Lead Free :

Lead Free

Gate Charge (Qg) (Max) @ Vgs :

51nC @ 10V

ECCN Code :

EAR99

Number of Pins :

3

Vgs(th) (Max) @ Id :

4V @ 250µA

Drive Voltage (Max Rds On,Min Rds On) :

10V

Mount :

Through Hole

Transistor Application :

SWITCHING

Pulsed Drain Current-Max (IDM) :

72A

FET Type :

N-Channel

Case Connection :

Isolated

Turn-Off Delay Time :

80 ns

Current Rating :

18A

Rise Time :

195ns

Power Dissipation-Max :

41W Tc

Number of Elements :

1

Rds On (Max) @ Id, Vgs :

52m Ω @ 9A, 10V

Current - Continuous Drain (Id) @ 25°C :

18A Tc

Series :

QFET®

Number of Terminations :

3

Vgs (Max) :

±25V