FQPF32N12V2
- Mfr.Part #
- FQPF32N12V2
- Manufacturer
- Fairchild Semiconductor
- Package / Case
- TO-220-3 Full Pack
- Datasheet
- Download
- Description
- MOSFET N-CH 120V 32A TO220F
- Stock
- 25,847
- In Stock :
- 25,847
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- Manufacturer :
- Fairchild Semiconductor
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Case Connection :
- Isolated
- Surface Mount :
- No
- Peak Reflow Temperature (Cel) :
- Not Applicable
- Drain-source On Resistance-Max :
- 0.05Ohm
- Vgs (Max) :
- ±30V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Power Dissipation-Max :
- 50W Tc
- Series :
- QFET®
- Operating Temperature :
- -55°C~175°C TJ
- Terminal Finish :
- MATTE TIN
- Drain Current-Max (Abs) (ID) :
- 32A
- Input Capacitance (Ciss) (Max) @ Vds :
- 1.86pF @ 25V
- Qualification Status :
- COMMERCIAL
- Gate Charge (Qg) (Max) @ Vgs :
- 53nC @ 10V
- Avalanche Energy Rating (Eas) :
- 439 mJ
- Drain to Source Voltage (Vdss) :
- 120V
- Current - Continuous Drain (Id) @ 25°C :
- 32A Tc
- Pbfree Code :
- yes
- Mounting Type :
- Through Hole
- Pulsed Drain Current-Max (IDM) :
- 128A
- JEDEC-95 Code :
- TO-220AB
- JESD-609 Code :
- e3
- Number of Terminations :
- 3
- Transistor Application :
- SWITCHING
- Pin Count :
- 3
- Operating Mode :
- ENHANCEMENT MODE
- Number of Elements :
- 1
- RoHS Status :
- ROHS3 Compliant
- Rds On (Max) @ Id, Vgs :
- 50m Ω @ 16A, 10V
- DS Breakdown Voltage-Min :
- 120V
- Package / Case :
- TO-220-3 Full Pack
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- FET Type :
- N-Channel
- Reach Compliance Code :
- Unknown
- Time@Peak Reflow Temperature-Max (s) :
- Not Applicable
- Packaging :
- Tube
- Terminal Position :
- Single
- Transistor Element Material :
- SILICON
- JESD-30 Code :
- R-PSFM-T3
- Datasheets
- FQPF32N12V2

N-Channel Tube 50m Ω @ 16A, 10V ±30V 1.86pF @ 25V 53nC @ 10V 120V TO-220-3 Full Pack
FQPF32N12V2 Overview
In this case, the MOSFET is susceptible to avalanche breakdown, applied energy is termed avalanche energy, and the avalanche energy rating (Eas) for the MOSFET is 439 mJ.As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 1.86pF @ 25V.The drain current is the maximum continuous current this device can conduct, which is 32A.Pulsed drain current is maximum rated peak drain current 128A.A normal operation of the DS requires keeping the breakdown voltage above 120V.This transistor requires a drain-source voltage (Vdss) of 120V.In order to reduce power consumption, this device uses a drive voltage of 10V volts (10V).
FQPF32N12V2 Features
the avalanche energy rating (Eas) is 439 mJ
based on its rated peak drain current 128A.
a 120V drain to source voltage (Vdss)
FQPF32N12V2 Applications
There are a lot of Rochester Electronics, LLC
FQPF32N12V2 applications of single MOSFETs transistors.
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
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