FQPF32N12V2

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Mfr.Part #
FQPF32N12V2
Manufacturer
onsemi
Package / Case
TO-220-3 Full Pack
Datasheet
Download
Description
MOSFET N-CH 120V 32A TO220F
Stock
43,972
In Stock :
43,972

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Manufacturer :
onsemi
Product Category :
Transistors - FETs, MOSFETs - Single
JESD-609 Code :
e3
Time@Peak Reflow Temperature-Max (s) :
Not Applicable
Drain-source On Resistance-Max :
0.05Ohm
Terminal Position :
Single
Case Connection :
Isolated
Mounting Type :
Through Hole
Transistor Application :
SWITCHING
Pulsed Drain Current-Max (IDM) :
128A
Operating Temperature :
-55°C~175°C TJ
Configuration :
SINGLE WITH BUILT-IN DIODE
Packaging :
Tube
DS Breakdown Voltage-Min :
120V
Drive Voltage (Max Rds On,Min Rds On) :
10V
Peak Reflow Temperature (Cel) :
Not Applicable
Power Dissipation-Max :
50W Tc
Avalanche Energy Rating (Eas) :
439 mJ
RoHS Status :
ROHS3 Compliant
Rds On (Max) @ Id, Vgs :
50m Ω @ 16A, 10V
Vgs (Max) :
±30V
Transistor Element Material :
SILICON
Gate Charge (Qg) (Max) @ Vgs :
53nC @ 10V
Drain Current-Max (Abs) (ID) :
32A
Reach Compliance Code :
Unknown
Current - Continuous Drain (Id) @ 25°C :
32A Tc
Operating Mode :
ENHANCEMENT MODE
Terminal Finish :
MATTE TIN
Surface Mount :
No
Drain to Source Voltage (Vdss) :
120V
Number of Elements :
1
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
JESD-30 Code :
R-PSFM-T3
JEDEC-95 Code :
TO-220AB
Number of Terminations :
3
Input Capacitance (Ciss) (Max) @ Vds :
1.86pF @ 25V
FET Type :
N-Channel
Package / Case :
TO-220-3 Full Pack
Pbfree Code :
yes
Vgs(th) (Max) @ Id :
4V @ 250µA
Series :
QFET®
Pin Count :
3
Qualification Status :
COMMERCIAL
Datasheets
FQPF32N12V2
Introducing Transistors - FETs, MOSFETs - Single onsemi FQPF32N12V2 from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Through Hole, Operating Temperature:-55°C~175°C TJ, Number of Terminations:3, Package / Case:TO-220-3 Full Pack, FQPF32N12V2 pinout, FQPF32N12V2 datasheet PDF, FQPF32N12V2 amp .Beyond Transistors - FETs, MOSFETs - Single onsemi FQPF32N12V2 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi FQPF32N12V2


N-Channel Tube 50m Ω @ 16A, 10V ±30V 1.86pF @ 25V 53nC @ 10V 120V TO-220-3 Full Pack

FQPF32N12V2 Overview


In this case, the MOSFET is susceptible to avalanche breakdown, applied energy is termed avalanche energy, and the avalanche energy rating (Eas) for the MOSFET is 439 mJ.As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 1.86pF @ 25V.The drain current is the maximum continuous current this device can conduct, which is 32A.Pulsed drain current is maximum rated peak drain current 128A.A normal operation of the DS requires keeping the breakdown voltage above 120V.This transistor requires a drain-source voltage (Vdss) of 120V.In order to reduce power consumption, this device uses a drive voltage of 10V volts (10V).

FQPF32N12V2 Features


the avalanche energy rating (Eas) is 439 mJ
based on its rated peak drain current 128A.
a 120V drain to source voltage (Vdss)


FQPF32N12V2 Applications


There are a lot of Rochester Electronics, LLC
FQPF32N12V2 applications of single MOSFETs transistors.


  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
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