FQPF2NA90
- Mfr.Part #
- FQPF2NA90
- Manufacturer
- onsemi
- Package / Case
- TO-220-3 Full Pack
- Datasheet
- Download
- Description
- MOSFET N-CH 900V 1.7A TO220F
- Stock
- 12,134
- In Stock :
- 12,134
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- JESD-30 Code :
- R-PSFM-T3
- Operating Temperature :
- -55°C~150°C TJ
- Time@Peak Reflow Temperature-Max (s) :
- Not Applicable
- Vgs(th) (Max) @ Id :
- 5V @ 250μA
- Surface Mount :
- No
- Mounting Type :
- Through Hole
- Series :
- QFET®
- Case Connection :
- Isolated
- Pulsed Drain Current-Max (IDM) :
- 6.8A
- Power Dissipation-Max :
- 39W Tc
- Current - Continuous Drain (Id) @ 25°C :
- 1.7A Tc
- Number of Elements :
- 1
- Qualification Status :
- COMMERCIAL
- Number of Terminations :
- 3
- Package / Case :
- TO-220-3 Full Pack
- Drain to Source Voltage (Vdss) :
- 900V
- Input Capacitance (Ciss) (Max) @ Vds :
- 680pF @ 25V
- Peak Reflow Temperature (Cel) :
- Not Applicable
- Transistor Element Material :
- SILICON
- Transistor Application :
- SWITCHING
- Pbfree Code :
- yes
- Gate Charge (Qg) (Max) @ Vgs :
- 20nC @ 10V
- Vgs (Max) :
- ±30V
- Packaging :
- Tube
- Drain Current-Max (Abs) (ID) :
- 1.7A
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- FET Type :
- N-Channel
- Operating Mode :
- ENHANCEMENT MODE
- Terminal Finish :
- MATTE TIN
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- RoHS Status :
- ROHS3 Compliant
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- DS Breakdown Voltage-Min :
- 900V
- Rds On (Max) @ Id, Vgs :
- 5.8 Ω @ 850mA, 10V
- Avalanche Energy Rating (Eas) :
- 310 mJ
- JESD-609 Code :
- e3
- Pin Count :
- 3
- Terminal Position :
- Single
- Datasheets
- FQPF2NA90

N-Channel Tube 5.8 Ω @ 850mA, 10V ±30V 680pF @ 25V 20nC @ 10V 900V TO-220-3 Full Pack
FQPF2NA90 Overview
This type of breakdown is known as "avalanche breakdown", and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 310 mJ.The maximum input capacitance of this device is 680pF @ 25V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.As shown in the table below, the drain current of this device is 1.7A.There is no pulsed drain current maximum for this device based on its rated peak drain current 6.8A.To maintain normal operation, it's recommended that the DS breakdown voltage be kept above 900V.The drain-to-source voltage (Vdss) of this transistor needs to be at 900V in order to operate.Using drive voltage (10V), this device helps reduce its power consumption.
FQPF2NA90 Features
the avalanche energy rating (Eas) is 310 mJ
based on its rated peak drain current 6.8A.
a 900V drain to source voltage (Vdss)
FQPF2NA90 Applications
There are a lot of Rochester Electronics, LLC
FQPF2NA90 applications of single MOSFETs transistors.
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
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