FQPF2N90

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Vgs (Max) :

±30V

FET Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

15nC @ 10V

Series :

QFET®

Reach Compliance Code :

Unknown

Pulsed Drain Current-Max (IDM) :

5.6A

Operating Temperature :

-55°C~150°C TJ

Qualification Status :

COMMERCIAL

RoHS Status :

ROHS3 Compliant

Number of Terminations :

3

Time@Peak Reflow Temperature-Max (s) :

Not Applicable

Drive Voltage (Max Rds On,Min Rds On) :

10V

Package / Case :

TO-220-3 Full Pack

Power Dissipation-Max :

35W Tc

Mounting Type :

Through Hole

Avalanche Energy Rating (Eas) :

170 mJ

Packaging :

Tube

Case Connection :

Isolated

Drain to Source Voltage (Vdss) :

900V

Pbfree Code :

yes

Current - Continuous Drain (Id) @ 25°C :

1.4A Tc

Peak Reflow Temperature (Cel) :

Not Applicable

Configuration :

SINGLE WITH BUILT-IN DIODE

Number of Elements :

1

Transistor Element Material :

SILICON

Input Capacitance (Ciss) (Max) @ Vds :

500pF @ 25V

Transistor Application :

SWITCHING

Terminal Position :

Single

Drain Current-Max (Abs) (ID) :

1.4A

Vgs(th) (Max) @ Id :

5V @ 250μA

JESD-609 Code :

e3

Surface Mount :

No

DS Breakdown Voltage-Min :

900V

Pin Count :

3

Terminal Finish :

MATTE TIN

Rds On (Max) @ Id, Vgs :

7.2 Ω @ 700mA, 10V

JESD-30 Code :

R-PSFM-T3

Operating Mode :

ENHANCEMENT MODE

Moisture Sensitivity Level (MSL) :

1 (Unlimited)