FQPF2N80

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Vgs(th) (Max) @ Id :

5V @ 250μA

Threshold Voltage :

5V

Continuous Drain Current (ID) :

1.5A

Pbfree Code :

yes

RoHS Status :

ROHS3 Compliant

Power Dissipation-Max :

35W Tc

Lifecycle Status :

ACTIVE (Last Updated: 17 hours ago)

Current - Continuous Drain (Id) @ 25°C :

1.5A Tc

Turn-Off Delay Time :

25 ns

Operating Temperature :

-55°C~150°C TJ

Length :

10.16mm

Number of Pins :

3

Drain to Source Breakdown Voltage :

800V

Fall Time (Typ) :

28 ns

Weight :

2.27g

Lead Free :

Lead Free

ECCN Code :

EAR99

Radiation Hardening :

No

REACH SVHC :

No SVHC

Current Rating :

1.5A

Height :

9.19mm

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Factory Lead Time :

4 Weeks

Mount :

Through Hole

Number of Elements :

1

Voltage - Rated DC :

800V

Packaging :

Tube

Vgs (Max) :

±30V

JESD-609 Code :

e3

Element Configuration :

Single

Case Connection :

Isolated

Turn On Delay Time :

12 ns

Pulsed Drain Current-Max (IDM) :

6A

Package / Case :

TO-220-3 Full Pack

Number of Terminations :

3

Series :

QFET®

Rds On (Max) @ Id, Vgs :

6.3 Ω @ 750mA, 10V

Input Capacitance (Ciss) (Max) @ Vds :

550pF @ 25V

Mounting Type :

Through Hole

Rise Time :

30ns

Gate Charge (Qg) (Max) @ Vgs :

15nC @ 10V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Published :

2000

Transistor Application :

SWITCHING

Gate to Source Voltage (Vgs) :

30V

Operating Mode :

ENHANCEMENT MODE

Power Dissipation :

35W

FET Type :

N-Channel

Width :

4.7mm

Transistor Element Material :

SILICON

Terminal Finish :

Tin (Sn)