FQPF2N70

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Published :

2013

FET Type :

N-Channel

Vgs(th) (Max) @ Id :

5V @ 250μA

Transistor Application :

SWITCHING

Power Dissipation :

28W

Radiation Hardening :

No

Element Configuration :

Single

Case Connection :

Isolated

Rise Time :

80ns

Transistor Element Material :

SILICON

Input Capacitance (Ciss) (Max) @ Vds :

350pF @ 25V

ECCN Code :

EAR99

Rds On (Max) @ Id, Vgs :

6.3 Ω @ 1A, 10V

Factory Lead Time :

5 Weeks

Terminal Finish :

Tin (Sn)

Vgs (Max) :

±30V

Operating Mode :

ENHANCEMENT MODE

Mounting Type :

Through Hole

JEDEC-95 Code :

TO-220AB

Drive Voltage (Max Rds On,Min Rds On) :

10V

Current Rating :

2A

Pbfree Code :

yes

Packaging :

Tube

Fall Time (Typ) :

70 ns

Number of Elements :

1

Drain Current-Max (Abs) (ID) :

2A

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Voltage - Rated DC :

700V

Pulsed Drain Current-Max (IDM) :

8A

Power Dissipation-Max :

28W Tc

Mount :

Through Hole

Current - Continuous Drain (Id) @ 25°C :

2A Tc

Lifecycle Status :

ACTIVE (Last Updated: 1 week ago)

Number of Pins :

3

RoHS Status :

ROHS3 Compliant

Package / Case :

TO-220-3 Full Pack

Turn-Off Delay Time :

50 ns

Gate Charge (Qg) (Max) @ Vgs :

11nC @ 10V

Continuous Drain Current (ID) :

2A

Weight :

2.27g

Lead Free :

Lead Free

Gate to Source Voltage (Vgs) :

30V

Series :

QFET®

Drain to Source Breakdown Voltage :

700V

JESD-609 Code :

e3

Operating Temperature :

-55°C~150°C TJ

Number of Terminations :

3