FQPF2N70
- Mfr.Part #
- FQPF2N70
- Manufacturer
- Fairchild Semiconductor
- Package / Case
- TO-220-3 Full Pack
- Datasheet
- Download
- Description
- MOSFET N-CH 700V 2A TO220F
- Stock
- 1,029
- In Stock :
- 1,029
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- Manufacturer :
- Fairchild Semiconductor
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Rds On (Max) @ Id, Vgs :
- 6.3 Ω @ 1A, 10V
- Power Dissipation-Max :
- 28W Tc
- JEDEC-95 Code :
- TO-220AB
- Pbfree Code :
- yes
- Current - Continuous Drain (Id) @ 25°C :
- 2A Tc
- Gate Charge (Qg) (Max) @ Vgs :
- 11nC @ 10V
- Rise Time :
- 80ns
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Series :
- QFET®
- Number of Elements :
- 1
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Current Rating :
- 2A
- Number of Terminations :
- 3
- Drain Current-Max (Abs) (ID) :
- 2A
- Case Connection :
- Isolated
- Weight :
- 2.27g
- Turn-Off Delay Time :
- 50 ns
- Number of Pins :
- 3
- Operating Temperature :
- -55°C~150°C TJ
- Voltage - Rated DC :
- 700V
- Lead Free :
- Lead Free
- Mount :
- Through Hole
- Mounting Type :
- Through Hole
- Element Configuration :
- Single
- Packaging :
- Tube
- RoHS Status :
- ROHS3 Compliant
- Drain to Source Breakdown Voltage :
- 700V
- Fall Time (Typ) :
- 70 ns
- Lifecycle Status :
- ACTIVE (Last Updated: 1 week ago)
- FET Type :
- N-Channel
- Continuous Drain Current (ID) :
- 2A
- Transistor Application :
- SWITCHING
- JESD-609 Code :
- e3
- Published :
- 2013
- Gate to Source Voltage (Vgs) :
- 30V
- Terminal Finish :
- Tin (Sn)
- Vgs(th) (Max) @ Id :
- 5V @ 250μA
- Power Dissipation :
- 28W
- Pulsed Drain Current-Max (IDM) :
- 8A
- Transistor Element Material :
- SILICON
- Input Capacitance (Ciss) (Max) @ Vds :
- 350pF @ 25V
- Operating Mode :
- ENHANCEMENT MODE
- Factory Lead Time :
- 5 Weeks
- Vgs (Max) :
- ±30V
- Radiation Hardening :
- No
- Package / Case :
- TO-220-3 Full Pack
- ECCN Code :
- EAR99
- Datasheets
- FQPF2N70

N-Channel Tube 6.3 Ω @ 1A, 10V ±30V 350pF @ 25V 11nC @ 10V TO-220-3 Full Pack
FQPF2N70 Description
The FQPF2N70 power MOSFET is manufactured in accordance with the planar stripe and DMOS technologies developed by ON Semiconductor Semiconductor. Using this advanced MOSFET technology, the on-state resistance is reduced, and superior switching performance and avalanche energy strength are enhanced. The FQPF2N70 MOSFET is suitable for switched mode power supplies, active power factor correction, and electronic lamp ballasts.
FQPF2N70 Features
-
Low Crss ( Typ. 5pF)
-
100% avalanche tested
-
2A, 700V, RDS(on) = 6.3Ω(Max.) @VGS = 10 V, ID = 1.0A
-
Low gate charge ( Typ. 9nC)
FQPF2N70 Applications
-
Relay drivers
-
Other Industrial
-
Microphone preamplifiers
-
Lighting systems
-
Audio Amplifiers
-
Signal Amplifiers
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