FQPF2N60

Manufacturer :

Fairchild Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

FET Type :

N-Channel

Power Dissipation-Max :

23W Tc

REACH SVHC :

No SVHC

Radiation Hardening :

No

Number of Terminations :

3

Current - Continuous Drain (Id) @ 25°C :

2A Tc

Threshold Voltage :

4V

Current Rating :

2A

Terminal Finish :

Tin (Sn)

Weight :

2.27g

Voltage - Rated DC :

600V

Pbfree Code :

yes

Continuous Drain Current (ID) :

2A

Mount :

Through Hole

Resistance :

4.7ohm

Length :

10.16mm

Published :

2003

Drive Voltage (Max Rds On,Min Rds On) :

10V

Series :

QFET®

Element Configuration :

Single

Case Connection :

Isolated

Rds On (Max) @ Id, Vgs :

4.7 Ω @ 1A, 10V

ECCN Code :

EAR99

Power Dissipation :

23W

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Packaging :

Tube

Rise Time :

25ns

Turn On Delay Time :

9 ns

Transistor Application :

SWITCHING

Height :

9.19mm

RoHS Status :

ROHS3 Compliant

Package / Case :

TO-220-3 Full Pack

JESD-609 Code :

e3

Turn-Off Delay Time :

24 ns

Lifecycle Status :

ACTIVE (Last Updated: 9 hours ago)

Factory Lead Time :

4 Weeks

Operating Temperature :

-55°C~150°C TJ

Lead Free :

Lead Free

Number of Pins :

3

Pulsed Drain Current-Max (IDM) :

8A

Gate to Source Voltage (Vgs) :

30V

Transistor Element Material :

SILICON

Drain to Source Breakdown Voltage :

600V

Vgs (Max) :

±30V

Mounting Type :

Through Hole

Gate Charge (Qg) (Max) @ Vgs :

12nC @ 10V

Fall Time (Typ) :

28 ns

Operating Mode :

ENHANCEMENT MODE

JEDEC-95 Code :

TO-220AB

Number of Elements :

1

Drain Current-Max (Abs) (ID) :

2A

Input Capacitance (Ciss) (Max) @ Vds :

235pF @ 25V

Width :

4.7mm

Vgs(th) (Max) @ Id :

4V @ 250µA