FQPF2N60

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Series :

QFET®

Drain to Source Breakdown Voltage :

600V

Number of Pins :

3

Factory Lead Time :

4 Weeks

Resistance :

4.7ohm

Operating Temperature :

-55°C~150°C TJ

Gate Charge (Qg) (Max) @ Vgs :

12nC @ 10V

Element Configuration :

Single

Voltage - Rated DC :

600V

Fall Time (Typ) :

28 ns

Drive Voltage (Max Rds On,Min Rds On) :

10V

Rise Time :

25ns

Turn On Delay Time :

9 ns

ECCN Code :

EAR99

Power Dissipation-Max :

23W Tc

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Case Connection :

Isolated

Threshold Voltage :

4V

Mount :

Through Hole

Lead Free :

Lead Free

Transistor Element Material :

SILICON

Power Dissipation :

23W

Package / Case :

TO-220-3 Full Pack

Radiation Hardening :

No

Rds On (Max) @ Id, Vgs :

4.7 Ω @ 1A, 10V

Drain Current-Max (Abs) (ID) :

2A

Turn-Off Delay Time :

24 ns

Length :

10.16mm

Published :

2003

Weight :

2.27g

Packaging :

Tube

Operating Mode :

ENHANCEMENT MODE

Number of Terminations :

3

Width :

4.7mm

FET Type :

N-Channel

Vgs(th) (Max) @ Id :

4V @ 250µA

RoHS Status :

ROHS3 Compliant

Pbfree Code :

yes

JEDEC-95 Code :

TO-220AB

Input Capacitance (Ciss) (Max) @ Vds :

235pF @ 25V

Gate to Source Voltage (Vgs) :

30V

Continuous Drain Current (ID) :

2A

Lifecycle Status :

ACTIVE (Last Updated: 9 hours ago)

JESD-609 Code :

e3

Mounting Type :

Through Hole

Current - Continuous Drain (Id) @ 25°C :

2A Tc

Pulsed Drain Current-Max (IDM) :

8A

Current Rating :

2A

Height :

9.19mm

Number of Elements :

1

Terminal Finish :

Tin (Sn)

REACH SVHC :

No SVHC

Transistor Application :

SWITCHING

Vgs (Max) :

±30V