FQPF2N30

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Vgs (Max) :

±30V

Qualification Status :

COMMERCIAL

Drive Voltage (Max Rds On,Min Rds On) :

10V

Transistor Application :

SWITCHING

Gate Charge (Qg) (Max) @ Vgs :

5nC @ 10V

Configuration :

SINGLE WITH BUILT-IN DIODE

Number of Elements :

1

Pbfree Code :

yes

Input Capacitance (Ciss) (Max) @ Vds :

130pF @ 25V

Packaging :

Tube

Vgs(th) (Max) @ Id :

5V @ 250μA

Current - Continuous Drain (Id) @ 25°C :

1.34A Tc

Terminal Finish :

MATTE TIN

Time@Peak Reflow Temperature-Max (s) :

Not Applicable

Mounting Type :

Through Hole

Terminal Position :

Single

Drain to Source Voltage (Vdss) :

300V

RoHS Status :

ROHS3 Compliant

Power Dissipation-Max :

16W Tc

Operating Mode :

ENHANCEMENT MODE

Pulsed Drain Current-Max (IDM) :

5.36A

Pin Count :

3

JESD-30 Code :

R-PSFM-T3

Surface Mount :

No

Operating Temperature :

-55°C~150°C TJ

Rds On (Max) @ Id, Vgs :

3.7 Ω @ 670mA, 10V

Package / Case :

TO-220-3 Full Pack

Peak Reflow Temperature (Cel) :

Not Applicable

FET Type :

N-Channel

JESD-609 Code :

e3

Reach Compliance Code :

Unknown

DS Breakdown Voltage-Min :

300V

Number of Terminations :

3

Drain Current-Max (Abs) (ID) :

1.34A

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Element Material :

SILICON

Series :

QFET®

Avalanche Energy Rating (Eas) :

100 mJ