FQPF27P06

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Current - Continuous Drain (Id) @ 25°C :

17A Tc

Operating Mode :

ENHANCEMENT MODE

Gate to Source Voltage (Vgs) :

25V

Drain to Source Voltage (Vdss) :

60V

Length :

10.67mm

Radiation Hardening :

No

Lifecycle Status :

ACTIVE (Last Updated: 1 week ago)

Series :

QFET®

Operating Temperature :

-55°C~175°C TJ

Package / Case :

TO-220-3 Full Pack

Power Dissipation-Max :

47W Tc

Mounting Type :

Through Hole

Continuous Drain Current (ID) :

17A

Rds On (Max) @ Id, Vgs :

70m Ω @ 8.5A, 10V

FET Type :

P-Channel

Terminal Finish :

Tin (Sn)

JESD-609 Code :

e3

Height :

16.3mm

Transistor Application :

SWITCHING

Input Capacitance (Ciss) (Max) @ Vds :

1400pF @ 25V

Mount :

Through Hole

Fall Time (Typ) :

90 ns

Number of Pins :

3

Element Configuration :

Single

Gate Charge (Qg) (Max) @ Vgs :

43nC @ 10V

Packaging :

Tube

ECCN Code :

EAR99

Vgs (Max) :

±25V

Power Dissipation :

47W

Width :

4.7mm

Lead Free :

Lead Free

Number of Elements :

1

Voltage - Rated DC :

-60V

Published :

2001

Vgs(th) (Max) @ Id :

4V @ 250µA

REACH SVHC :

No SVHC

Pbfree Code :

yes

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Element Material :

SILICON

Turn On Delay Time :

18 ns

Factory Lead Time :

9 Weeks

Drive Voltage (Max Rds On,Min Rds On) :

10V

RoHS Status :

ROHS3 Compliant

Resistance :

70mOhm

Rise Time :

185ns

Threshold Voltage :

-2V

Pulsed Drain Current-Max (IDM) :

68A

Drain to Source Breakdown Voltage :

-60V

Turn-Off Delay Time :

30 ns

Case Connection :

Isolated

Avalanche Energy Rating (Eas) :

560 mJ

Number of Terminations :

3

Weight :

2.27g

Current Rating :

-17A