FQPF27P06

Manufacturer :

Fairchild Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Gate to Source Voltage (Vgs) :

25V

Lifecycle Status :

ACTIVE (Last Updated: 1 week ago)

Width :

4.7mm

Length :

10.67mm

Operating Temperature :

-55°C~175°C TJ

Rds On (Max) @ Id, Vgs :

70m Ω @ 8.5A, 10V

Voltage - Rated DC :

-60V

Transistor Application :

SWITCHING

Radiation Hardening :

No

Threshold Voltage :

-2V

Number of Terminations :

3

Published :

2001

Current - Continuous Drain (Id) @ 25°C :

17A Tc

Power Dissipation-Max :

47W Tc

Fall Time (Typ) :

90 ns

Operating Mode :

ENHANCEMENT MODE

Input Capacitance (Ciss) (Max) @ Vds :

1400pF @ 25V

Package / Case :

TO-220-3 Full Pack

Element Configuration :

Single

Lead Free :

Lead Free

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

RoHS Status :

ROHS3 Compliant

Transistor Element Material :

SILICON

Turn-Off Delay Time :

30 ns

Resistance :

70mOhm

Drive Voltage (Max Rds On,Min Rds On) :

10V

Pulsed Drain Current-Max (IDM) :

68A

Factory Lead Time :

9 Weeks

Gate Charge (Qg) (Max) @ Vgs :

43nC @ 10V

Terminal Finish :

Tin (Sn)

Turn On Delay Time :

18 ns

ECCN Code :

EAR99

Number of Elements :

1

Pbfree Code :

yes

Vgs(th) (Max) @ Id :

4V @ 250µA

REACH SVHC :

No SVHC

Mounting Type :

Through Hole

JESD-609 Code :

e3

Case Connection :

Isolated

Vgs (Max) :

±25V

Weight :

2.27g

Series :

QFET®

Mount :

Through Hole

Number of Pins :

3

Packaging :

Tube

Height :

16.3mm

Drain to Source Voltage (Vdss) :

60V

Continuous Drain Current (ID) :

17A

Drain to Source Breakdown Voltage :

-60V

FET Type :

P-Channel

Power Dissipation :

47W

Current Rating :

-17A

Rise Time :

185ns

Avalanche Energy Rating (Eas) :

560 mJ