FQPF27N25

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Weight :

2.27g

Factory Lead Time :

9 Weeks

Gate Charge (Qg) (Max) @ Vgs :

65nC @ 10V

Pulsed Drain Current-Max (IDM) :

56A

ECCN Code :

EAR99

Current Rating :

14A

Case Connection :

Isolated

Fall Time (Typ) :

120 ns

Packaging :

Tube

Vgs(th) (Max) @ Id :

5V @ 250μA

Mount :

Through Hole

Contact Plating :

Tin

Power Dissipation :

55W

Turn On Delay Time :

32 ns

Vgs (Max) :

±30V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Pbfree Code :

yes

Transistor Element Material :

SILICON

Mounting Type :

Through Hole

Current - Continuous Drain (Id) @ 25°C :

14A Tc

Turn-Off Delay Time :

80 ns

Radiation Hardening :

No

Gate to Source Voltage (Vgs) :

30V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Continuous Drain Current (ID) :

14A

JESD-609 Code :

e3

Number of Elements :

1

Lead Free :

Lead Free

Operating Temperature :

-55°C~150°C TJ

Number of Pins :

3

Package / Case :

TO-220-3 Full Pack

Published :

2013

RoHS Status :

ROHS3 Compliant

Rise Time :

270ns

Transistor Application :

SWITCHING

Operating Mode :

ENHANCEMENT MODE

Rds On (Max) @ Id, Vgs :

110m Ω @ 7A, 10V

Series :

QFET®

Lifecycle Status :

ACTIVE (Last Updated: 6 days ago)

Voltage - Rated DC :

250V

Drain to Source Breakdown Voltage :

250V

Input Capacitance (Ciss) (Max) @ Vds :

2450pF @ 25V

Element Configuration :

Single

Avalanche Energy Rating (Eas) :

600 mJ

FET Type :

N-Channel

Power Dissipation-Max :

55W Tc

Number of Terminations :

3