FQPF22N30

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Continuous Drain Current (ID) :

12A

Transistor Element Material :

SILICON

FET Type :

N-Channel

Turn-Off Delay Time :

85 ns

Rise Time :

230ns

Radiation Hardening :

No

Current - Continuous Drain (Id) @ 25°C :

12A Tc

Fall Time (Typ) :

100 ns

Published :

2013

Operating Temperature :

-55°C~150°C TJ

Vgs(th) (Max) @ Id :

5V @ 250μA

JESD-609 Code :

e3

Package / Case :

TO-220-3 Full Pack

Number of Terminations :

3

Lifecycle Status :

ACTIVE (Last Updated: 2 days ago)

Case Connection :

Isolated

ECCN Code :

EAR99

Weight :

2.27g

Drain to Source Breakdown Voltage :

300V

Operating Mode :

ENHANCEMENT MODE

Terminal Finish :

Tin (Sn)

Voltage - Rated DC :

300V

Gate Charge (Qg) (Max) @ Vgs :

60nC @ 10V

Gate to Source Voltage (Vgs) :

30V

Element Configuration :

Single

Power Dissipation-Max :

56W Tc

Transistor Application :

SWITCHING

RoHS Status :

ROHS3 Compliant

Factory Lead Time :

4 Weeks

Number of Elements :

1

Pbfree Code :

yes

Mount :

Through Hole

Rds On (Max) @ Id, Vgs :

160m Ω @ 6A, 10V

Input Capacitance (Ciss) (Max) @ Vds :

2200pF @ 25V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Series :

QFET®

Current Rating :

12A

Number of Pins :

3

Lead Free :

Lead Free

Turn On Delay Time :

35 ns

Pulsed Drain Current-Max (IDM) :

48A

Power Dissipation :

56W

Drive Voltage (Max Rds On,Min Rds On) :

10V

Vgs (Max) :

±30V

Mounting Type :

Through Hole

Packaging :

Tube