FQPF20N06

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Width :

4.9mm

Operating Temperature :

-55°C~175°C TJ

Fall Time (Typ) :

25 ns

Gate to Source Voltage (Vgs) :

25V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Factory Lead Time :

4 Weeks

Series :

QFET®

Transistor Application :

SWITCHING

Package / Case :

TO-220-3 Full Pack

Element Configuration :

Single

Lifecycle Status :

ACTIVE (Last Updated: 2 days ago)

Drain-source On Resistance-Max :

0.06Ohm

FET Type :

N-Channel

Operating Mode :

ENHANCEMENT MODE

Power Dissipation :

30W

Current - Continuous Drain (Id) @ 25°C :

15A Tc

Voltage - Rated DC :

60V

Published :

2013

Input Capacitance (Ciss) (Max) @ Vds :

590pF @ 25V

Power Dissipation-Max :

30W Tc

Turn-Off Delay Time :

20 ns

Turn On Delay Time :

5 ns

RoHS Status :

ROHS3 Compliant

ECCN Code :

EAR99

Continuous Drain Current (ID) :

15A

Number of Elements :

1

Rds On (Max) @ Id, Vgs :

60m Ω @ 7.5A, 10V

Number of Terminations :

3

Mounting Type :

Through Hole

Radiation Hardening :

No

Case Connection :

Isolated

Drain to Source Breakdown Voltage :

60V

Gate Charge (Qg) (Max) @ Vgs :

15nC @ 10V

Terminal Finish :

Tin (Sn)

Pulsed Drain Current-Max (IDM) :

60A

Height :

16.07mm

Current Rating :

15A

Weight :

2.27g

JESD-609 Code :

e3

Packaging :

Tube

Vgs (Max) :

±25V

Mount :

Through Hole

Vgs(th) (Max) @ Id :

4V @ 250µA

Pbfree Code :

yes

Rise Time :

45ns

Lead Free :

Lead Free

Length :

10.36mm

Number of Pins :

3

Transistor Element Material :

SILICON