FQPF1P50

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Vgs(th) (Max) @ Id :

5V @ 250μA

DS Breakdown Voltage-Min :

500V

Pulsed Drain Current-Max (IDM) :

4.12A

Number of Elements :

1

Qualification Status :

COMMERCIAL

Pin Count :

3

Drain Current-Max (Abs) (ID) :

1.03A

Pbfree Code :

yes

Transistor Element Material :

SILICON

Current - Continuous Drain (Id) @ 25°C :

1.03A Tc

Drive Voltage (Max Rds On,Min Rds On) :

10V

Transistor Application :

SWITCHING

FET Type :

P-Channel

Vgs (Max) :

±30V

RoHS Status :

ROHS3 Compliant

Package / Case :

TO-220-3 Full Pack

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Time@Peak Reflow Temperature-Max (s) :

Not Applicable

Gate Charge (Qg) (Max) @ Vgs :

14nC @ 10V

Peak Reflow Temperature (Cel) :

Not Applicable

Operating Temperature :

-55°C~150°C TJ

Rds On (Max) @ Id, Vgs :

10.5 Ω @ 515mA, 10V

Power Dissipation-Max :

28W Tc

Avalanche Energy Rating (Eas) :

110 mJ

Mounting Type :

Through Hole

Series :

QFET®

Operating Mode :

ENHANCEMENT MODE

Drain to Source Voltage (Vdss) :

500V

Number of Terminations :

3

JESD-609 Code :

e3

Terminal Position :

Single

Input Capacitance (Ciss) (Max) @ Vds :

350pF @ 25V

Packaging :

Tube

Configuration :

SINGLE WITH BUILT-IN DIODE

Surface Mount :

No

JESD-30 Code :

R-PSFM-T3

Terminal Finish :

MATTE TIN