FQPF1N50

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Application :

SWITCHING

Avalanche Energy Rating (Eas) :

80 mJ

Terminal Finish :

MATTE TIN

JESD-609 Code :

e3

Pulsed Drain Current-Max (IDM) :

3.6A

Peak Reflow Temperature (Cel) :

Not Applicable

Number of Terminations :

3

Time@Peak Reflow Temperature-Max (s) :

Not Applicable

Series :

QFET®

Package / Case :

TO-220-3 Full Pack

Current - Continuous Drain (Id) @ 25°C :

900mA Tc

Rds On (Max) @ Id, Vgs :

9 Ω @ 450mA, 10V

Packaging :

Tube

Power Dissipation-Max :

16W Tc

Case Connection :

Isolated

Transistor Element Material :

SILICON

Pin Count :

3

Surface Mount :

No

Number of Elements :

1

Input Capacitance (Ciss) (Max) @ Vds :

150pF @ 25V

Terminal Position :

Single

Pbfree Code :

yes

Mounting Type :

Through Hole

Qualification Status :

COMMERCIAL

Drain to Source Voltage (Vdss) :

500V

Drive Voltage (Max Rds On,Min Rds On) :

10V

RoHS Status :

ROHS3 Compliant

Operating Temperature :

-55°C~150°C TJ

Drain Current-Max (Abs) (ID) :

0.9A

JESD-30 Code :

R-PSFM-T3

DS Breakdown Voltage-Min :

500V

Operating Mode :

ENHANCEMENT MODE

Gate Charge (Qg) (Max) @ Vgs :

5.5nC @ 10V

Vgs(th) (Max) @ Id :

5V @ 250μA

FET Type :

N-Channel

Configuration :

SINGLE WITH BUILT-IN DIODE

Vgs (Max) :

±30V

Drain-source On Resistance-Max :

9Ohm