FQPF17P06
- Mfr.Part #
- FQPF17P06
- Manufacturer
- onsemi
- Package / Case
- TO-220-3 Full Pack
- Datasheet
- Download
- Description
- MOSFET P-CH 60V 12A TO220F
- Stock
- 79,835
- In Stock :
- 79,835
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Operating Mode :
- ENHANCEMENT MODE
- Peak Reflow Temperature (Cel) :
- Not Applicable
- Package / Case :
- TO-220-3 Full Pack
- Vgs (Max) :
- ±25V
- Drain to Source Voltage (Vdss) :
- 60V
- Operating Temperature :
- -55°C~175°C TJ
- Rds On (Max) @ Id, Vgs :
- 120m Ω @ 6A, 10V
- Drain-source On Resistance-Max :
- 0.12Ohm
- Power Dissipation-Max :
- 39W Tc
- Drain Current-Max (Abs) (ID) :
- 12A
- Pin Count :
- 3
- Current - Continuous Drain (Id) @ 25°C :
- 12A Tc
- Mounting Type :
- Through Hole
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Case Connection :
- Isolated
- Number of Terminations :
- 3
- Terminal Position :
- Single
- JESD-30 Code :
- R-PSFM-T3
- Input Capacitance (Ciss) (Max) @ Vds :
- 900pF @ 25V
- Reach Compliance Code :
- Unknown
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- RoHS Status :
- ROHS3 Compliant
- DS Breakdown Voltage-Min :
- 60V
- Qualification Status :
- COMMERCIAL
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Transistor Element Material :
- SILICON
- Time@Peak Reflow Temperature-Max (s) :
- Not Applicable
- FET Type :
- P-Channel
- Number of Elements :
- 1
- Series :
- QFET®
- Terminal Finish :
- MATTE TIN
- JESD-609 Code :
- e3
- Transistor Application :
- SWITCHING
- Avalanche Energy Rating (Eas) :
- 300 mJ
- Surface Mount :
- No
- Pulsed Drain Current-Max (IDM) :
- 48A
- Gate Charge (Qg) (Max) @ Vgs :
- 27nC @ 10V
- Packaging :
- Tube
- Pbfree Code :
- yes
- Datasheets
- FQPF17P06

P-Channel Tube 120m Ω @ 6A, 10V ±25V 900pF @ 25V 27nC @ 10V 60V TO-220-3 Full Pack
FQPF17P06 Overview
As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 300 mJ.A device's maximum input capacitance is 900pF @ 25V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its drain current is 12A, and it is the maximum continuous current the device can conduct.Its maximum pulsed drain current is 48A, which is also its maximum rating peak drainage current.For normal operation, maintain the DS breakdown voltage above 60V.To operate this transistor, you need to apply a 60V drain to source voltage (Vdss).This device uses no drive voltage (10V) to reduce its overall power consumption.
FQPF17P06 Features
the avalanche energy rating (Eas) is 300 mJ
based on its rated peak drain current 48A.
a 60V drain to source voltage (Vdss)
FQPF17P06 Applications
There are a lot of Rochester Electronics, LLC
FQPF17P06 applications of single MOSFETs transistors.
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
- DC-to-DC converters
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