FQPF17N40

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Vgs (Max) :

±30V

Gate Charge (Qg) (Max) @ Vgs :

60nC @ 10V

Lead Free :

Lead Free

Number of Terminations :

3

Radiation Hardening :

No

Fall Time (Typ) :

105 ns

Turn-Off Delay Time :

90 ns

Rds On (Max) @ Id, Vgs :

270m Ω @ 4.75A, 10V

Voltage - Rated DC :

400V

Mount :

Through Hole

Transistor Application :

SWITCHING

Rise Time :

185ns

Element Configuration :

Single

Continuous Drain Current (ID) :

9.5A

Current Rating :

16A

RoHS Status :

ROHS3 Compliant

Input Capacitance (Ciss) (Max) @ Vds :

2300pF @ 25V

Terminal Finish :

Tin (Sn)

JESD-609 Code :

e3

Power Dissipation :

56W

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Turn On Delay Time :

40 ns

Current - Continuous Drain (Id) @ 25°C :

9.5A Tc

Mounting Type :

Through Hole

Lifecycle Status :

ACTIVE (Last Updated: 1 day ago)

Operating Temperature :

-55°C~150°C TJ

Vgs(th) (Max) @ Id :

5V @ 250μA

Pbfree Code :

yes

ECCN Code :

EAR99

Number of Elements :

1

Drain-source On Resistance-Max :

0.27Ohm

Drain to Source Breakdown Voltage :

400V

Transistor Element Material :

SILICON

Factory Lead Time :

4 Weeks

Operating Mode :

ENHANCEMENT MODE

Package / Case :

TO-220-3 Full Pack

Published :

2013

Gate to Source Voltage (Vgs) :

30V

Weight :

2.27g

Series :

QFET®

Power Dissipation-Max :

56W Tc

Packaging :

Tube

Number of Pins :

3

Drive Voltage (Max Rds On,Min Rds On) :

10V

FET Type :

N-Channel