FQPF16N25C

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Turn On Delay Time :

15 ns

Transistor Application :

SWITCHING

JESD-609 Code :

e3

Power Dissipation-Max :

43W Tc

Voltage - Rated DC :

250V

Pulsed Drain Current-Max (IDM) :

62.4A

Number of Elements :

1

Element Configuration :

Single

ECCN Code :

EAR99

Lifecycle Status :

ACTIVE (Last Updated: 1 day ago)

Pbfree Code :

yes

Vgs(th) (Max) @ Id :

4V @ 250µA

Case Connection :

Isolated

Drain-source On Resistance-Max :

0.27Ohm

Drain to Source Breakdown Voltage :

250V

Current - Continuous Drain (Id) @ 25°C :

15.6A Tc

Turn-Off Delay Time :

135 ns

Power Dissipation :

43W

Radiation Hardening :

No

Height :

9.19mm

Mount :

Through Hole

Terminal Finish :

Tin (Sn)

Current Rating :

16A

Published :

2004

Continuous Drain Current (ID) :

15.6A

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Package / Case :

TO-220-3 Full Pack

JEDEC-95 Code :

TO-220AB

Series :

QFET®

Lead Free :

Lead Free

FET Type :

N-Channel

Drive Voltage (Max Rds On,Min Rds On) :

10V

Number of Terminations :

3

Operating Temperature :

-55°C~150°C TJ

Gate to Source Voltage (Vgs) :

30V

Transistor Element Material :

SILICON

Rise Time :

130ns

Packaging :

Tube

Gate Charge (Qg) (Max) @ Vgs :

53.5nC @ 10V

RoHS Status :

ROHS3 Compliant

Input Capacitance (Ciss) (Max) @ Vds :

1080pF @ 25V

Factory Lead Time :

7 Weeks

Vgs (Max) :

±30V

Rds On (Max) @ Id, Vgs :

270m Ω @ 7.8A, 10V

Length :

10.16mm

Width :

4.7mm

Mounting Type :

Through Hole

Weight :

2.27g

Number of Pins :

3

Fall Time (Typ) :

105 ns

Operating Mode :

ENHANCEMENT MODE