FQPF13N50CF

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Transistor Element Material :

SILICON

Weight :

2.27g

Lifecycle Status :

ACTIVE (Last Updated: 4 days ago)

Operating Mode :

ENHANCEMENT MODE

Number of Terminations :

3

Fall Time (Typ) :

100 ns

Series :

FRFET®

Mounting Type :

Through Hole

Mount :

Through Hole

Element Configuration :

Single

JESD-609 Code :

e3

Operating Temperature :

-55°C~150°C TJ

ECCN Code :

EAR99

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

JEDEC-95 Code :

TO-220AB

Vgs (Max) :

±30V

Case Connection :

Isolated

Rds On (Max) @ Id, Vgs :

540m Ω @ 6.5A, 10V

RoHS Status :

ROHS3 Compliant

Drain to Source Breakdown Voltage :

500V

Number of Elements :

1

Continuous Drain Current (ID) :

13A

Threshold Voltage :

4V

Number of Pins :

3

Voltage - Rated DC :

500V

Package / Case :

TO-220-3 Full Pack

Resistance :

540mOhm

Turn On Delay Time :

25 ns

Published :

2014

REACH SVHC :

No SVHC

Power Dissipation-Max :

48W Tc

Turn-Off Delay Time :

130 ns

Vgs(th) (Max) @ Id :

4V @ 250µA

Current Rating :

13A

Power Dissipation :

48W

Lead Free :

Lead Free

Pbfree Code :

yes

Packaging :

Tube

Current - Continuous Drain (Id) @ 25°C :

13A Tc

Terminal Finish :

Tin (Sn)

Factory Lead Time :

10 Weeks

Pulsed Drain Current-Max (IDM) :

52A

Transistor Application :

SWITCHING

Input Capacitance (Ciss) (Max) @ Vds :

2055pF @ 25V

FET Type :

N-Channel

Gate to Source Voltage (Vgs) :

30V

Additional Feature :

FAST SWITCHING

Rise Time :

100ns

Gate Charge (Qg) (Max) @ Vgs :

56nC @ 10V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Radiation Hardening :

No