FQP34N20
- Mfr.Part #
- FQP34N20
- Manufacturer
- onsemi
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- MOSFET N-CH 200V 31A TO220-3
- Stock
- 11,430
- In Stock :
- 11,430
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Published :
- 2000
- Height :
- 9.4mm
- Number of Elements :
- 1
- Current - Continuous Drain (Id) @ 25°C :
- 31A Tc
- Threshold Voltage :
- 5V
- RoHS Status :
- ROHS3 Compliant
- Lifecycle Status :
- ACTIVE (Last Updated: 2 days ago)
- Nominal Vgs :
- 5 V
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Turn-Off Delay Time :
- 125 ns
- Drain-source On Resistance-Max :
- 0.075Ohm
- Series :
- QFET®
- Operating Temperature :
- -55°C~150°C TJ
- Current Rating :
- 31A
- Gate Charge (Qg) (Max) @ Vgs :
- 78nC @ 10V
- Mount :
- Through Hole
- Terminal Finish :
- Tin (Sn)
- Width :
- 4.7mm
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Number of Pins :
- 3
- Transistor Element Material :
- SILICON
- Turn On Delay Time :
- 40 ns
- Power Dissipation-Max :
- 180W Tc
- Input Capacitance (Ciss) (Max) @ Vds :
- 3100pF @ 25V
- Gate to Source Voltage (Vgs) :
- 30V
- FET Type :
- N-Channel
- Transistor Application :
- SWITCHING
- Weight :
- 1.8g
- Pbfree Code :
- yes
- Drain to Source Breakdown Voltage :
- 200V
- Rise Time :
- 280ns
- Operating Mode :
- ENHANCEMENT MODE
- Voltage - Rated DC :
- 200V
- Lead Free :
- Lead Free
- Power Dissipation :
- 180W
- Package / Case :
- TO-220-3
- Length :
- 10.1mm
- JESD-609 Code :
- e3
- Rds On (Max) @ Id, Vgs :
- 75m Ω @ 15.5A, 10V
- Avalanche Energy Rating (Eas) :
- 640 mJ
- Vgs (Max) :
- ±30V
- Element Configuration :
- Single
- REACH SVHC :
- No SVHC
- Fall Time (Typ) :
- 115 ns
- Radiation Hardening :
- No
- JEDEC-95 Code :
- TO-220AB
- Vgs(th) (Max) @ Id :
- 5V @ 250μA
- Mounting Type :
- Through Hole
- Packaging :
- Tube
- Continuous Drain Current (ID) :
- 31A
- Factory Lead Time :
- 5 Weeks
- ECCN Code :
- EAR99
- Number of Terminations :
- 3
- Datasheets
- FQP34N20

N-Channel Tube 75m Ω @ 15.5A, 10V ±30V 3100pF @ 25V 78nC @ 10V TO-220-3
Description
The FQP34N20 is a Power MOSFET, N-Channel, QFET?, 200 V, 31 A, 75 m|?, TO-220. On Semiconductor Semiconductor's exclusive planar stripe and DMOS technologies are used to create this N-Channel enhancement mode power MOSFET. This cutting-edge MOSFET technology has been specifically designed to lower on-state resistance while delivering excellent switching performance and great avalanche energy strength. Electronic light ballasts, active power factor correction (PFC), and switched mode power supply are all compatible with these products.
Features
-
31A, 200V, RDS(on) = 75m|?(Max.) @VGS = 10 V, ID = 15.5A
-
Low gate charge ( Typ. 60nC)
-
Low Crss ( Typ. 55pF)
-
100% avalanche tested
-
Maximum junction temperature (TJ(max))
Applications
-
Other Audio & Video
-
Small motor control
-
Switch Mode Power Supplies (SMPS)
-
Power-Over-Ethernet (PoE)
-
Solar inverters
-
Automotive applications
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