FQP30N06L

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Length :

10.67mm

Power Dissipation-Max :

79W Tc

Resistance :

35mOhm

Drive Voltage (Max Rds On,Min Rds On) :

5V 10V

Operating Temperature :

-55°C~175°C TJ

Width :

4.7mm

Factory Lead Time :

4 Weeks

ECCN Code :

EAR99

Current Rating :

32A

Published :

2013

Pbfree Code :

yes

Series :

QFET®

Threshold Voltage :

2.5V

Operating Mode :

ENHANCEMENT MODE

Rds On (Max) @ Id, Vgs :

35m Ω @ 16A, 10V

REACH SVHC :

No SVHC

Nominal Vgs :

2.5 V

Vgs (Max) :

±20V

FET Type :

N-Channel

Vgs(th) (Max) @ Id :

2.5V @ 250μA

Rise Time :

210ns

Mount :

Through Hole

Turn-Off Delay Time :

60 ns

Turn On Delay Time :

15 ns

Terminal Finish :

Tin (Sn)

Number of Elements :

1

Radiation Hardening :

No

Height :

16.3mm

Transistor Application :

SWITCHING

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Voltage - Rated DC :

60V

RoHS Status :

ROHS3 Compliant

JEDEC-95 Code :

TO-220AB

Gate Charge (Qg) (Max) @ Vgs :

20nC @ 5V

Element Configuration :

Single

Input Capacitance (Ciss) (Max) @ Vds :

1040pF @ 25V

Fall Time (Typ) :

110 ns

Number of Terminations :

3

Lifecycle Status :

ACTIVE (Last Updated: 2 days ago)

Weight :

1.8g

Drain to Source Breakdown Voltage :

60V

Packaging :

Tube

Lead Free :

Lead Free

Number of Pins :

3

Mounting Type :

Through Hole

JESD-609 Code :

e3

Continuous Drain Current (ID) :

32A

Transistor Element Material :

SILICON

Power Dissipation :

79W

Package / Case :

TO-220-3

Current - Continuous Drain (Id) @ 25°C :

32A Tc

Gate to Source Voltage (Vgs) :

20V