FQI7P06TU

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Rds On (Max) @ Id, Vgs :

410m Ω @ 3.5A, 10V

Packaging :

Tube

Configuration :

SINGLE WITH BUILT-IN DIODE

Surface Mount :

No

Mounting Type :

Through Hole

Terminal Finish :

MATTE TIN

Reach Compliance Code :

Unknown

Drain Current-Max (Abs) (ID) :

7A

Transistor Application :

SWITCHING

Transistor Element Material :

SILICON

Number of Elements :

1

Pbfree Code :

yes

DS Breakdown Voltage-Min :

60V

Terminal Position :

Single

Series :

QFET®

Qualification Status :

COMMERCIAL

Pulsed Drain Current-Max (IDM) :

28A

Peak Reflow Temperature (Cel) :

Not Applicable

Vgs (Max) :

±25V

Avalanche Energy Rating (Eas) :

90 mJ

Drain-source On Resistance-Max :

0.41Ohm

Drive Voltage (Max Rds On,Min Rds On) :

10V

Pin Count :

3

Gate Charge (Qg) (Max) @ Vgs :

8.2nC @ 10V

RoHS Status :

ROHS3 Compliant

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Vgs(th) (Max) @ Id :

4V @ 250µA

FET Type :

P-Channel

Current - Continuous Drain (Id) @ 25°C :

7A Tc

Drain to Source Voltage (Vdss) :

60V

Operating Mode :

ENHANCEMENT MODE

Operating Temperature :

-55°C~175°C TJ

Package / Case :

TO-262-3 Long Leads, I2Pak, TO-262AA

Number of Terminations :

3

JESD-30 Code :

R-PSIP-T3

Input Capacitance (Ciss) (Max) @ Vds :

295pF @ 25V

JESD-609 Code :

e3

Power Dissipation-Max :

3.75W Ta 45W Tc

Time@Peak Reflow Temperature-Max (s) :

Not Applicable