FQI7N80TU

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Fall Time (Typ) :

55 ns

Vgs (Max) :

±30V

Published :

2013

Number of Elements :

1

ECCN Code :

EAR99

Element Configuration :

Single

Terminal Finish :

Tin (Sn)

Weight :

2.084g

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Drain to Source Breakdown Voltage :

800V

Rds On (Max) @ Id, Vgs :

1.5 Ω @ 3.3A, 10V

Series :

QFET®

Gate Charge (Qg) (Max) @ Vgs :

52nC @ 10V

Power Dissipation :

3.13W

Pulsed Drain Current-Max (IDM) :

26.4A

Transistor Application :

SWITCHING

Factory Lead Time :

5 Weeks

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Lead Free :

Lead Free

Qualification Status :

Not Qualified

Number of Terminations :

3

Current Rating :

6.6A

JESD-609 Code :

e3

Mounting Type :

Through Hole

Lifecycle Status :

ACTIVE (Last Updated: 1 week ago)

Turn-Off Delay Time :

95 ns

Vgs(th) (Max) @ Id :

5V @ 250μA

Package / Case :

TO-262-3 Long Leads, I2Pak, TO-262AA

Operating Mode :

ENHANCEMENT MODE

Packaging :

Tube

JESD-30 Code :

R-PSIP-T3

Input Capacitance (Ciss) (Max) @ Vds :

1850pF @ 25V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Avalanche Energy Rating (Eas) :

580 mJ

Mount :

Through Hole

Gate to Source Voltage (Vgs) :

30V

Reach Compliance Code :

not_compliant

Rise Time :

80ns

Continuous Drain Current (ID) :

6.6A

Turn On Delay Time :

35 ns

Voltage - Rated DC :

800V

Pbfree Code :

yes

Power Dissipation-Max :

3.13W Ta 167W Tc

Current - Continuous Drain (Id) @ 25°C :

6.6A Tc

RoHS Status :

ROHS3 Compliant

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Element Material :

SILICON

Operating Temperature :

-55°C~150°C TJ

FET Type :

N-Channel