FQI5N60CTU

Manufacturer :

Fairchild Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Published :

2013

Number of Elements :

1

Power Dissipation :

3.13W

Gate Charge (Qg) (Max) @ Vgs :

19nC @ 10V

Pbfree Code :

yes

Turn On Delay Time :

10 ns

Additional Feature :

FAST SWITCHING

Transistor Element Material :

SILICON

Rise Time :

42ns

Weight :

2.084g

Gate to Source Voltage (Vgs) :

30V

Continuous Drain Current (ID) :

4.5A

Drain to Source Breakdown Voltage :

600V

Mount :

Through Hole

Fall Time (Typ) :

46 ns

Packaging :

Tube

Current - Continuous Drain (Id) @ 25°C :

4.5A Tc

Turn-Off Delay Time :

38 ns

Transistor Application :

SWITCHING

JESD-30 Code :

R-PSIP-T3

Input Capacitance (Ciss) (Max) @ Vds :

670pF @ 25V

Lifecycle Status :

ACTIVE (Last Updated: 2 weeks ago)

Operating Temperature :

-55°C~150°C TJ

Power Dissipation-Max :

3.13W Ta 100W Tc

Package / Case :

TO-262-3 Long Leads, I2Pak, TO-262AA

Lead Free :

Lead Free

Terminal Finish :

Tin (Sn)

Series :

QFET®

Rds On (Max) @ Id, Vgs :

2.5 Ω @ 2.25A, 10V

Factory Lead Time :

4 Weeks

Number of Terminations :

3

Drive Voltage (Max Rds On,Min Rds On) :

10V

Current Rating :

5A

Voltage - Rated DC :

600V

ECCN Code :

EAR99

Element Configuration :

Single

RoHS Status :

ROHS3 Compliant

FET Type :

N-Channel

JESD-609 Code :

e3

Vgs (Max) :

±30V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Radiation Hardening :

No

Mounting Type :

Through Hole

Vgs(th) (Max) @ Id :

4V @ 250µA

Operating Mode :

ENHANCEMENT MODE