FQI50N06TU

Manufacturer :

Fairchild Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Pulsed Drain Current-Max (IDM) :

200A

Number of Terminations :

3

RoHS Status :

ROHS3 Compliant

JESD-30 Code :

R-PSIP-T3

Lifecycle Status :

ACTIVE (Last Updated: 1 week ago)

Element Configuration :

Single

Operating Temperature :

-55°C~175°C TJ

Radiation Hardening :

No

Package / Case :

TO-262-3 Long Leads, I2Pak, TO-262AA

Gate to Source Voltage (Vgs) :

25V

FET Type :

N-Channel

Drive Voltage (Max Rds On,Min Rds On) :

10V

Turn On Delay Time :

15 ns

Gate Charge (Qg) (Max) @ Vgs :

41nC @ 10V

Voltage - Rated DC :

60V

Input Capacitance (Ciss) (Max) @ Vds :

1540pF @ 25V

Power Dissipation-Max :

3.75W Ta 120W Tc

Transistor Element Material :

SILICON

Rds On (Max) @ Id, Vgs :

22m Ω @ 25A, 10V

Fall Time (Typ) :

65 ns

Transistor Application :

SWITCHING

Weight :

2.084g

Terminal Finish :

Tin (Sn)

Mount :

Through Hole

Number of Elements :

1

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Current - Continuous Drain (Id) @ 25°C :

50A Tc

Operating Mode :

ENHANCEMENT MODE

ECCN Code :

EAR99

Drain to Source Breakdown Voltage :

60V

Rise Time :

105ns

Series :

QFET®

Power Dissipation :

3.75W

Continuous Drain Current (ID) :

50A

Vgs(th) (Max) @ Id :

4V @ 250µA

Packaging :

Tube

Current Rating :

50A

Lead Free :

Lead Free

Avalanche Energy Rating (Eas) :

490 mJ

Vgs (Max) :

±25V

Drain-source On Resistance-Max :

0.022Ohm

Pbfree Code :

yes

Turn-Off Delay Time :

60 ns

Mounting Type :

Through Hole

JESD-609 Code :

e3

Factory Lead Time :

6 Weeks