FQI4N80TU

Manufacturer :

Fairchild Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

RoHS Status :

ROHS3 Compliant

Power Dissipation :

3.13W

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Element Material :

SILICON

Vgs(th) (Max) @ Id :

5V @ 250μA

Element Configuration :

Single

Fall Time (Typ) :

35 ns

Number of Pins :

3

ECCN Code :

EAR99

Mounting Type :

Through Hole

Factory Lead Time :

8 Weeks

Turn On Delay Time :

16 ns

Width :

4.5mm

JESD-609 Code :

e3

Vgs (Max) :

±30V

Operating Temperature :

-55°C~150°C TJ

Operating Mode :

ENHANCEMENT MODE

Weight :

2.084g

Current Rating :

3.9A

Series :

QFET®

Package / Case :

TO-262-3 Long Leads, I2Pak, TO-262AA

Rds On (Max) @ Id, Vgs :

3.6 Ω @ 1.95A, 10V

Radiation Hardening :

No

Avalanche Energy Rating (Eas) :

460 mJ

Transistor Application :

SWITCHING

Turn-Off Delay Time :

35 ns

Terminal Finish :

Tin (Sn)

Input Capacitance (Ciss) (Max) @ Vds :

880pF @ 25V

Gate to Source Voltage (Vgs) :

30V

Packaging :

Tube

Number of Terminations :

3

Power Dissipation-Max :

3.13W Ta 130W Tc

Mount :

Through Hole

Drain to Source Breakdown Voltage :

800V

Voltage - Rated DC :

800V

FET Type :

N-Channel

Height :

9.2mm

Current - Continuous Drain (Id) @ 25°C :

3.9A Tc

Gate Charge (Qg) (Max) @ Vgs :

25nC @ 10V

Length :

9.9mm

Lead Free :

Lead Free

Rise Time :

45ns

Lifecycle Status :

ACTIVE (Last Updated: 2 days ago)

Number of Elements :

1

Pbfree Code :

yes

Continuous Drain Current (ID) :

3.9A

Resistance :

3.6Ohm

Published :

2007

Drive Voltage (Max Rds On,Min Rds On) :

10V