FQI4N20TU

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Drain Current-Max (Abs) (ID) :

3.6A

Packaging :

Tube

Vgs(th) (Max) @ Id :

5V @ 250μA

Reach Compliance Code :

Unknown

Surface Mount :

No

Rds On (Max) @ Id, Vgs :

1.4 Ω @ 1.8A, 10V

Terminal Position :

Single

Configuration :

SINGLE WITH BUILT-IN DIODE

Operating Mode :

ENHANCEMENT MODE

Number of Terminations :

3

Gate Charge (Qg) (Max) @ Vgs :

6.5nC @ 10V

DS Breakdown Voltage-Min :

200V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Pin Count :

3

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Drain to Source Voltage (Vdss) :

200V

Transistor Element Material :

SILICON

Pulsed Drain Current-Max (IDM) :

14.4A

Series :

QFET®

JESD-30 Code :

R-PSIP-T3

Package / Case :

TO-262-3 Long Leads, I2Pak, TO-262AA

Avalanche Energy Rating (Eas) :

52 mJ

RoHS Status :

ROHS3 Compliant

Pbfree Code :

yes

FET Type :

N-Channel

Mounting Type :

Through Hole

Qualification Status :

COMMERCIAL

Transistor Application :

SWITCHING

Vgs (Max) :

±30V

Input Capacitance (Ciss) (Max) @ Vds :

220pF @ 25V

Operating Temperature :

-55°C~150°C TJ

Power Dissipation-Max :

3.13W Ta 45W Tc

Drive Voltage (Max Rds On,Min Rds On) :

10V

Terminal Finish :

NOT SPECIFIED

Number of Elements :

1

Current - Continuous Drain (Id) @ 25°C :

3.6A Tc