FQD8N25TF

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Terminal Position :

Single

Series :

QFET®

Reach Compliance Code :

Unknown

Configuration :

SINGLE WITH BUILT-IN DIODE

Pbfree Code :

yes

Avalanche Energy Rating (Eas) :

120 mJ

Drive Voltage (Max Rds On,Min Rds On) :

10V

JESD-30 Code :

R-PSSO-G2

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Input Capacitance (Ciss) (Max) @ Vds :

530pF @ 25V

Surface Mount :

yes

Power Dissipation-Max :

2.5W Ta 50W Tc

Vgs (Max) :

±30V

Qualification Status :

COMMERCIAL

Case Connection :

DRAIN

Pulsed Drain Current-Max (IDM) :

24.8A

Number of Elements :

1

Mounting Type :

Surface Mount

Gate Charge (Qg) (Max) @ Vgs :

15nC @ 10V

Terminal Form :

Gull wing

Operating Temperature :

-55°C~150°C TJ

FET Type :

N-Channel

Transistor Element Material :

SILICON

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drain Current-Max (Abs) (ID) :

6.2A

Drain-source On Resistance-Max :

0.55Ohm

Drain to Source Voltage (Vdss) :

250V

Vgs(th) (Max) @ Id :

5V @ 250μA

DS Breakdown Voltage-Min :

250V

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Pin Count :

3

Rds On (Max) @ Id, Vgs :

550m Ω @ 3.1A, 10V

Peak Reflow Temperature (Cel) :

260

Packaging :

Tape and Reel (TR)

Transistor Application :

SWITCHING

RoHS Status :

ROHS3 Compliant

Number of Terminations :

2

Terminal Finish :

MATTE TIN

JESD-609 Code :

e3

Current - Continuous Drain (Id) @ 25°C :

6.2A Tc

Operating Mode :

ENHANCEMENT MODE