FQD8N25TF

Manufacturer :

Fairchild Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Drain to Source Voltage (Vdss) :

250V

Reach Compliance Code :

Unknown

JESD-609 Code :

e3

Number of Elements :

1

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Drain Current-Max (Abs) (ID) :

6.2A

Power Dissipation-Max :

2.5W Ta 50W Tc

Input Capacitance (Ciss) (Max) @ Vds :

530pF @ 25V

Pin Count :

3

RoHS Status :

ROHS3 Compliant

Vgs (Max) :

±30V

Current - Continuous Drain (Id) @ 25°C :

6.2A Tc

Configuration :

SINGLE WITH BUILT-IN DIODE

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Pulsed Drain Current-Max (IDM) :

24.8A

Terminal Form :

Gull wing

DS Breakdown Voltage-Min :

250V

Peak Reflow Temperature (Cel) :

260

Transistor Application :

SWITCHING

Packaging :

Tape and Reel (TR)

Terminal Finish :

MATTE TIN

Series :

QFET®

Drain-source On Resistance-Max :

0.55Ohm

Case Connection :

DRAIN

Terminal Position :

Single

Operating Temperature :

-55°C~150°C TJ

Pbfree Code :

yes

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Operating Mode :

ENHANCEMENT MODE

Qualification Status :

COMMERCIAL

Gate Charge (Qg) (Max) @ Vgs :

15nC @ 10V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Mounting Type :

Surface Mount

FET Type :

N-Channel

Number of Terminations :

2

Avalanche Energy Rating (Eas) :

120 mJ

Rds On (Max) @ Id, Vgs :

550m Ω @ 3.1A, 10V

Transistor Element Material :

SILICON

JESD-30 Code :

R-PSSO-G2

Surface Mount :

yes

Vgs(th) (Max) @ Id :

5V @ 250μA