FQD6N40TM

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Power Dissipation-Max :

2.5W Ta 50W Tc

Avalanche Energy Rating (Eas) :

330 mJ

Transistor Element Material :

SILICON

Terminal Form :

Gull wing

RoHS Status :

ROHS3 Compliant

Vgs (Max) :

±30V

Pbfree Code :

yes

FET Type :

N-Channel

Operating Temperature :

-55°C~150°C TJ

Configuration :

SINGLE WITH BUILT-IN DIODE

Drain to Source Voltage (Vdss) :

400V

Terminal Finish :

NOT SPECIFIED

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Surface Mount :

yes

Pulsed Drain Current-Max (IDM) :

16.8A

Series :

QFET®

Drive Voltage (Max Rds On,Min Rds On) :

10V

Drain Current-Max (Abs) (ID) :

4.2A

Vgs(th) (Max) @ Id :

5V @ 250μA

Number of Elements :

1

Current - Continuous Drain (Id) @ 25°C :

4.2A Tc

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Packaging :

Tape and Reel (TR)

Input Capacitance (Ciss) (Max) @ Vds :

620pF @ 25V

Qualification Status :

COMMERCIAL

Number of Terminations :

2

Pin Count :

3

JESD-30 Code :

R-PSSO-G2

Reach Compliance Code :

Unknown

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Operating Mode :

ENHANCEMENT MODE

Mounting Type :

Surface Mount

Transistor Application :

SWITCHING

Rds On (Max) @ Id, Vgs :

1.15 Ω @ 2.1A, 10V

DS Breakdown Voltage-Min :

400V

Terminal Position :

Single

Gate Charge (Qg) (Max) @ Vgs :

17nC @ 10V

Case Connection :

DRAIN