FQD630TF

Manufacturer :

Fairchild Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Rds On (Max) @ Id, Vgs :

400m Ω @ 3.5A, 10V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Operating Mode :

ENHANCEMENT MODE

Case Connection :

DRAIN

Drain Current-Max (Abs) (ID) :

7A

Drive Voltage (Max Rds On,Min Rds On) :

10V

Pin Count :

3

JESD-609 Code :

e3

Terminal Position :

Single

Surface Mount :

yes

FET Type :

N-Channel

Current - Continuous Drain (Id) @ 25°C :

7A Tc

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Vgs (Max) :

±25V

Packaging :

Tape and Reel (TR)

Terminal Form :

Gull wing

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Element Material :

SILICON

Pbfree Code :

yes

JESD-30 Code :

R-PSSO-G2

Power Dissipation-Max :

2.5W Ta 46W Tc

Configuration :

SINGLE WITH BUILT-IN DIODE

Vgs(th) (Max) @ Id :

4V @ 250µA

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Mounting Type :

Surface Mount

Number of Elements :

1

Transistor Application :

SWITCHING

Series :

QFET®

Input Capacitance (Ciss) (Max) @ Vds :

550pF @ 25V

Operating Temperature :

-55°C~150°C TJ

Terminal Finish :

MATTE TIN

DS Breakdown Voltage-Min :

200V

Drain-source On Resistance-Max :

0.4Ohm

Qualification Status :

COMMERCIAL

Number of Terminations :

2

Pulsed Drain Current-Max (IDM) :

28A

Drain to Source Voltage (Vdss) :

200V

Avalanche Energy Rating (Eas) :

163 mJ

Gate Charge (Qg) (Max) @ Vgs :

25nC @ 10V

RoHS Status :

ROHS3 Compliant