FQD5P20TM
- Mfr.Part #
- FQD5P20TM
- Manufacturer
- onsemi
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- MOSFET P-CH 200V 3.7A DPAK
- Stock
- 12,194
- In Stock :
- 12,194
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Transistor Application :
- SWITCHING
- Contact Plating :
- Tin
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Number of Elements :
- 1
- Voltage - Rated DC :
- -200V
- Gate to Source Voltage (Vgs) :
- 30V
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- JESD-30 Code :
- R-PSSO-G2
- Current Rating :
- -3.7A
- Rds On (Max) @ Id, Vgs :
- 1.4 Ω @ 1.85A, 10V
- Operating Temperature :
- -55°C~150°C TJ
- Length :
- 6.73mm
- Packaging :
- Tape and Reel (TR)
- ECCN Code :
- EAR99
- Rise Time :
- 70ns
- Weight :
- 260.37mg
- REACH SVHC :
- No SVHC
- Lead Free :
- Lead Free
- Resistance :
- 1.4Ohm
- Pbfree Code :
- yes
- Case Connection :
- DRAIN
- Number of Terminations :
- 2
- Operating Mode :
- ENHANCEMENT MODE
- Number of Pins :
- 3
- Drain to Source Voltage (Vdss) :
- 200V
- Turn On Delay Time :
- 9 ns
- Transistor Element Material :
- SILICON
- Radiation Hardening :
- No
- Drain to Source Breakdown Voltage :
- -200V
- Turn-Off Delay Time :
- 12 ns
- Terminal Form :
- Gull wing
- Element Configuration :
- Single
- Lifecycle Status :
- ACTIVE (Last Updated: 1 day ago)
- Height :
- 2.39mm
- Power Dissipation :
- 2.5W
- Gate Charge (Qg) (Max) @ Vgs :
- 13nC @ 10V
- Current - Continuous Drain (Id) @ 25°C :
- 3.7A Tc
- FET Type :
- P-Channel
- Vgs(th) (Max) @ Id :
- 5V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds :
- 430pF @ 25V
- Mounting Type :
- Surface Mount
- Width :
- 6.22mm
- Fall Time (Typ) :
- 25 ns
- JESD-609 Code :
- e3
- RoHS Status :
- ROHS3 Compliant
- Vgs (Max) :
- ±30V
- Mount :
- Surface Mount
- Continuous Drain Current (ID) :
- 3.7A
- Power Dissipation-Max :
- 2.5W Ta 45W Tc
- Factory Lead Time :
- 4 Weeks
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Series :
- QFET®
- Datasheets
- FQD5P20TM

P-Channel Tape & Reel (TR) 1.4 Ω @ 1.85A, 10V ±30V 430pF @ 25V 13nC @ 10V 200V TO-252-3, DPak (2 Leads + Tab), SC-63
This P-channel enhanced mode power MOSFET is produced using Fairchild's proprietary planar beam and DMOS technology. This advanced MOSFET technology is specifically tailored to reduce on-resistance and provides excellent switching performance and high avalanche energy intensity. These devices are suitable for switching mode power supplies. Application of Audio Amplifier DC Motor Control and variable switching Power supply.
FQD5P20TM is a P-channel enhanced mode power MOSFET which is produced using Fairchild's proprietary planar beam and DMOS technology.
FQD5P20TM Features
· -3.7 A, -200 V,RDs(on) = 1.4 Ω (Max.)@ VGs = -10 V,1, =-1.85 A
·Low Gate Charge(Typ.10nC)
· Low Crss( Typ.12 pF)100% Avalanche Tested
· RoHS Compliant
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