FQD5N40TM
- Mfr.Part #
- FQD5N40TM
- Manufacturer
- onsemi
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- MOSFET N-CH 400V 3.4A DPAK
- Stock
- 25,027
- In Stock :
- 25,027
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Case Connection :
- DRAIN
- Qualification Status :
- COMMERCIAL
- Transistor Element Material :
- SILICON
- Reach Compliance Code :
- Unknown
- Packaging :
- Tape and Reel (TR)
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Pin Count :
- 3
- Power Dissipation-Max :
- 2.5W Ta 45W Tc
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Terminal Position :
- Single
- Series :
- QFET®
- Current - Continuous Drain (Id) @ 25°C :
- 3.4A Tc
- DS Breakdown Voltage-Min :
- 400V
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Number of Elements :
- 1
- Transistor Application :
- SWITCHING
- Operating Temperature :
- -55°C~150°C TJ
- RoHS Status :
- ROHS3 Compliant
- Mounting Type :
- Surface Mount
- Operating Mode :
- ENHANCEMENT MODE
- Pbfree Code :
- yes
- Vgs (Max) :
- ±30V
- Gate Charge (Qg) (Max) @ Vgs :
- 13nC @ 10V
- Pulsed Drain Current-Max (IDM) :
- 13.6A
- Terminal Finish :
- NOT SPECIFIED
- Avalanche Energy Rating (Eas) :
- 290 mJ
- JESD-30 Code :
- R-PSSO-G2
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Drain Current-Max (Abs) (ID) :
- 3.4A
- Number of Terminations :
- 2
- Surface Mount :
- yes
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Input Capacitance (Ciss) (Max) @ Vds :
- 460pF @ 25V
- Rds On (Max) @ Id, Vgs :
- 1.6 Ω @ 1.7A, 10V
- Drain to Source Voltage (Vdss) :
- 400V
- Terminal Form :
- Gull wing
- FET Type :
- N-Channel
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Vgs(th) (Max) @ Id :
- 5V @ 250μA
- Datasheets
- FQD5N40TM

N-Channel Tape & Reel (TR) 1.6 Ω @ 1.7A, 10V ±30V 460pF @ 25V 13nC @ 10V 400V TO-252-3, DPak (2 Leads + Tab), SC-63
FQD5N40TM Overview
Avalanche breakdown occurs when energy is applied to the MOSFET, and the avalanche energy ratings (Eas) are 290 mJ.A device's maximal input capacitance is 460pF @ 25V, which is defined as the capacitance between its input terminals with either input grounded.In this device, the drain current is 3.4A, which is the maximum continuous current the device can conduct.In terms of pulsed drain current, it has a maximum of 13.6A, which is its maximum rated peak drain current.To maintain normal operation, it is recommended that the DS breakdown voltage be above 400V.This transistor requires a 400V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (10V).
FQD5N40TM Features
the avalanche energy rating (Eas) is 290 mJ
based on its rated peak drain current 13.6A.
a 400V drain to source voltage (Vdss)
FQD5N40TM Applications
There are a lot of Rochester Electronics, LLC
FQD5N40TM applications of single MOSFETs transistors.
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
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